Inconel 740H is one of the most promising candidate Ni-base superalloys for the main steam pipe of 700 °C advanced ultra-supercritical (A-USC) coal-fired power plants. After processing and welding in manufacturing plant in solution-annealed state, large components was commonly suggested to have an extra aging treatment at 800 °C for 16 h, in order to obtain homogeneous γ′ precipitates. In this present work, creep tests and microstructure analyses were conducted on Inconel 740H pipe specimens under two different heat treatments to verify the necessity of aging process. Here we show that aging treatment has limited effect on the creep rupture life of Inconel 740H pipe. Both in grain interiors and along grain boundaries, crept specimens under two different heat treatments have the same precipitates. But the shape and distribution of γ′ in solution annealed sample is not as regular as the aged ones. Our results provide the underlying insight that aging treatment is not so necessary for the straight pipes if the on-site condition was hard to control. But for both groups of specimens, a small amount of h particles and some banded like M 23 C 6 were emerged during creep, which would be harmful to mechanical properties for the long run.

In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

In this work, we discussed the fault isolation method for the Thin-Film Transistor (TFT). Many defects in the TFT can be directly observed by optical microscope; however, some defects are not visible in either optical microscope or SEM making the fault isolation effort very challenging. We demonstrated that OBIRCH can be used to find defect locations in TFT failures for leakage and shorts. The TFT is so fragile that the laser power and biasing voltage have to be very carefully controlled to avoid damaging the TFT. After identifying the defect location by OBIRCH hot spot detection, the defect was successfully captured with TEM analysis.

The Rotation Averaged Spectrum of TEM diffraction patterns can be sharpened by a Maximum-Likelihood deconvolution algorithm. The sharpened spectrum will help to improve the precision of TEM diffraction-based techniques, e.g.: phase identification and strain analysis.

In this study, a comprehensive investigation of the Ag-Al bond degradation mechanism in an electrically failed module using the argon ion milling, scanning electron microscopy (SEM), dual beam focused ion beam-SEM, scanning transmission electron microscopy energy dispersive x-ray spectroscopy, and time-of-flight secondary ion mass spectrometry is reported. It is found that the bond degradation is due to the galvanic corrosion in the Ag-Al bonding area. Specific attention is given to the information of microstructures, elements, and corrosive ions in the degraded bond. In this study, it is believed that the Ag-Al bond degradation is highly related to the packaging designs.