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1-7 of 7
William A Hubbard
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Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2024) 26 (4): 27–34.
Published: 01 November 2024
Abstract
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Scanning TEM electron beam-induced current (STEM EBIC) imaging is a promising technique for providing high-resolution electronic and thermal contrast as a complement to TEM’s physical contrast. This article presents recent progress in using the focused ion beam (FIB) to prepare thin, electrically contacted cross-section samples for STEM EBIC imaging and in situ biasing. Techniques involving both standard Ga+ FIB and Xe+ plasma FIB (PFIB) are described.
Proceedings Papers
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 317-319, October 28–November 1, 2024,
Abstract
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The transmission electron microscope (TEM) is the standard high-resolution technique for imaging microelectronics. But TEM primarily generates contrast related to the physical structure and composition of samples, giving little insight into their electronic properties. Samples must also be electron transparent, typically requiring cross-sectioning of components to nanometers-thin foils prior to imaging, which can compromise their electronic integrity. These cross section samples are also notoriously difficult to electrically connect to without surface leakage dominating transport. As a result, successful in situ electronic testing or bias-manipulation of electronic devices in the TEM is notably rare. Here we image nanoscale, bias-induced electronic changes in an electrically contacted cross section extracted from a GaN high electronmobility transistor (HEMT). The sample is prepared using a Xe + -based plasma focused ion beam (PFIB) to eliminate conducting implantation of the standard FIB ion, Ga + . Scanning TEM electron beam-induced current (STEM EBIC) imaging visualizes bias-induced changes to the device’s electronic structure during normal biasing, stressing, and after failure, all performed in situ .
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 384-386, November 12–16, 2023,
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The operation of modern semiconductor components often relies on nanoscale electronic features emerging from complicated device architectures with finely tuned composition. While the physical structure of these devices may be straightforward to image, the resulting electronic characteristics are invisible to most high-resolution imaging techniques. Here we present electron beam-induced (EBIC) imaging in the scanning transmission electron microscope (STEM) as a high-resolution imaging technique with electronic-based contrast for characterizing complex semiconductor devices. Here, as an example case, we discuss the preparation and imaging of a STEM EBIC-compatible cross section extracted from a commercial AlGaAs high electron-mobility transistor (HEMT). The device exhibits low surface leakage, as measured via electrical testing and STEM EBIC conductivity contrast. The EBIC signal in the active layer of the device is mostly confined to the InGaAs channel, indicating that the electronic structure is largely preserved following sample preparation.
Proceedings Papers
ISTFA2023, ISTFA 2023: Tutorial Presentations from the 49th International Symposium for Testing and Failure Analysis, o1-o51, November 12–16, 2023,
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2023) 25 (1): 4–8.
Published: 01 February 2023
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This article discusses sample preparation challenges that have impeded progress in producing bias-enabled TEM samples from electronic components, as well as strategies to mitigate these issues.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 251-253, October 30–November 3, 2022,
Abstract
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Modern electronic systems rely on components with nanometer-scale feature sizes in which failure can be initiated by atomic-scale electronic defects. These defects can precipitate dramatic structural changes at much larger length scales, entirely obscuring the origin of such an event. The transmission electron microscope (TEM) is among the few imaging systems for which atomic-resolution imaging is easily accessible, making it a workhorse tool for performing failure analysis on nanoscale systems. When equipped with spectroscopic attachments TEM excels at determining a sample’s structure and composition, but the physical manifestation of defects can often be extremely subtle compared to their effect on electronic structure. Scanning TEM electron beam-induced current (STEM EBIC) imaging generates contrast directly related to electronic structure as a complement the physical information provided by standard TEM techniques. Recent STEM EBIC advances have enabled access to a variety of new types of electronic and thermal contrast at high resolution, including conductivity mapping. Here we discuss the STEM EBIC conductivity contrast mechanism and demonstrate its ability to map electronic transport in both failed and pristine devices.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2020) 22 (4): 4–8.
Published: 01 November 2020
Abstract
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The ability to discern the composition and placement of atoms in a sample makes TEM one of the most powerful characterization tools for microelectronic components. For many devices, however, the dynamics underlying normal operation do not displace atoms. Device function is, instead, mediated by electronic and thermal processes that have little effect on physical structure, necessitating additional tools to determine the causes of failure. In this article, the author presents results indicating that STEM EBIC, with the new SEEBIC mode, can provide electronic contrast that complements the physical-based contrast of STEM imaging. By identifying device features at higher risk of failure, the two methods may open a path to predictive failure analysis.