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Proceedings Papers

Failure Analysis of Bit Line to SNC Leakage Fail in 2x nm DRAM Using Nano-Probing Technique

Jaeho Won, Jundong Kim, Jina Kim, Jihye Shin, Jihoon Kim ...
ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 202-204, November 9–13, 2014,
https://doi.org/10.31399/asm.cp.istfa2014p0202
Abstract
Leakage current from bit line to SNC (Storage Node Contact) is one of the most critical issues in DRAM operation. Such failure becomes more difficult to visualize as the device shrinks. In this study, bit line to SNC leakage fail was analyzed using nano-probing tool in 2xnm DRAM technology.
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