The given project is to benchmark typical preparation methods under the aspect of the influence of initial intrinsic stresses inside electric components. Raman spectroscopy has been applied as well as the piezo resistive readout on a specifically designed model stress monitoring chip.

The analysis of thin layers in semiconductor components represents a central point in the quality control of semiconductor companies. Not only to control production processes, but to successfully operate also reverse engineering, reliable thin-film measurement methods are essential. In this work, non-destructive thin film EDX (energy dispersive X-ray micro analysis) software and μXRF (micro x-ray fluorescence analysis) were compared with TEM analysis. These methods ensure a high lateral resolution which is essential in the analysis of semiconductor structures. As an example, four different, for the semiconductor industry interesting, very thin coating systems in the nanometer range have been tested. In the individual cases best TEM detector contrast settings could be found, as well as optimum fluorescence lines settings on the EDX to minimize the errors. The TEM measurements, in thickness and composition, were compared to the thin film EDX software and the μXRF method results to determine their accuracy. It turns out that depending on the layer system recalibration with multilayer standards or at least with elemental standards is recommended. It could be shown that with μXRF and thin film EDX a reliable, rapid and non-destructive layer analysis is possible.

One challenge in failure analysis of microelectronic devices is the localization and root cause finding of leakage currents in passives. In this case study we present a successful approach for failure analysis of a diode leakage failure. An analytical flow will be introduced, which contains standard techniques as well as SQUID (superconducting quantum interference device) scanning magnetic microscopy and ToFSIMS as key methods for localization and root cause identification. [1]

Microstructural diagnostics for electronic packaging development and failure analysis under industrial manufacturing conditions require fast but reliable preparation routines which result in samples of high quality without preparation artefacts. The aim of the presented paper is to introduce a time- and cost efficient ion beam-based preparation procedure for high resolution Field Emission- Scanning Electron Microscopy (FESEM) analysis for packaging components. In particular, the considerable advantages of the proposed method compared to standard metallographic approaches will be demonstrated by discussing results of typical failure analysis examples as a function of the preparation procedure.