Differential thermal measurements have been extended beyond simple fault isolation to quasi and fully dynamic test conditions. A new technique of Dynamic Digital Modulation has been developed that allows highly sensitive differential thermal measurements during active device operations. A quadrature version of the modulation also produces a thermal time constant map that allows for direct visualization of heat flow within a device structure. A wide range of potential applications in failure analysis, reliability and reverse engineering are opened up. Examples include in situ identification of resistive bonds, internal heat flow in packaged devices and die, dynamic heat loading, and localization of structural elements for reverse engineering.

Laser induced emission and photocurrents with exponential power scaling were discovered using a near IR Raman laser scanning microscope. The potential for utilizing these highly non-linear effects for sub-diffraction limited imaging has been explored both theoretically and experimentally. A three-fold improvement over the linear diffraction limit was predicted and experimentally validated.

Spatial resolution limitations of IR thermal microscopy also limit the temperature accuracy for small thermal sources. Use of Raman temperature measurements significantly improves spatial resolution and thereby temperature accuracy. Previous, visible-wavelength, Raman temperature measurements are limited to top side measurements in silicon. This paper describes the first ever IR Raman measurements in silicon and demonstrates its use for backside temperature measurements.