The emergence of three-dimensional (3D) semiconductor devices has increased the importance of thermal imaging techniques. This paper presents a dual-capability system combining thermo-reflectance and thermal lock-in imaging (LIT) for high-speed, highly sensitive thermal analysis. We evaluate the hotspot detection capabilities of two-wavelength thermo-reflectance compared to LIT, including results from actual failure analysis cases. Our findings demonstrate the effectiveness of thermo-reflectance detection (TD) imaging for 3D devices where direct optical access to active layers is limited, such as 3D NAND flash memory and BSP-DN structured devices. This approach offers a promising solution for the thermal characterization of complex 3D semiconductor architectures.

High-speed time-resolved emission analysis is an attractive failure analysis technique because of its non-invasiveness. Super-conductive nanowire single photon detector (SNSPD or SSPD) is a key candidate of key device for time-resolved emission analysis. In this paper, we demonstrate time-resolved emission and its application of spatial resolution enhancement. We could confirm that time-resolved emission imaging can enhance spatial resolution by simple mathematical operations compared to static emission analysis, which is effective for finding emission spots before detailed time-resolved data investigations.

This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes physical parameters of the FinFETs such as electron temperature and the relation between signal curve and operating condition of the device by photon emission slopes and spectra. The paper also traces device self-heating effects within the FinFETs by means of EOFM signal courses. With EOFM it was possible to detect self-heating effects of the FinFETs providing a further method to estimate device and substrate heating. Results showed that it is possible to obtain valuable device parameter information (for example, electron temperatures and self-heating) via optical investigations (PEM/ EOFM), which are not accessible electrically in modern integrated circuits. This information adds further details to device reliability and functionality approximations.

Magnetic current imaging (MCI) is an effective method for the isolation of individual integrated circuit (IC) current paths [1]. MCI is therefore useful in localizing open/short defects. In the case of a short, the failure current must be large enough to enable the detection of the magnetic field; however, in the case of the open failure, the current is very weak and detection can be limited by the wiring capacitance and modulation frequency. Often, magnetic sensor sensitivity is a function of the sensor size. Superconducting Quantum Interference Device (SQUID) sensors can detect weak current in an open failure, but the resolution is limited by the sensor size and can be difficult to utilize for IC applications. A Giant Magnetic Resistance (GMR) sensor has enough resolution [2], but cannot achieve enough sensitivity till now. This paper will present the use of Magneto-Optical Frequency Mapping (MOFM) using a 532nm light source. In addition, this paper will describe a specific IC application for an open failure measurement. For this technique, the MO crystal (sensor material) is placed directly on the DUT (a wiring test sample). This paper will demonstrate that the magnetic field modulation from AC current in open wirings can be detected. In addition, the details of the AC current path can be visualized using a Magneto-Optical based MCI measurement. Finally, the open point in the failing circuit will be shown to be isolated with an accuracy of a few tens of micrometers.

Applications of MpOBIC (Multi-photon Optical Beam Induced Current) are discussed for use in defect localization. The MpOBIC signals in a ring oscillator under static conditions are examined and demonstrate the superior optical resolution of the system over traditional OBIRCH. A 5-fin diode test structure is examined under passive conditions, demonstrating that true multi-photon OBIC has occurred from the backside. The same diode is examined in forward bias, and the resulting discussion concludes that both OBIC and OBIRCH signals are present in the sample. Thus, we claim that both OBIC and OBIRCH signals can provide device characterization information from an MpOBIC system.

Magnetic field imaging (MFI) has been an excellent tool for a low resistance failure localization in LSI devices. A Superconducting Quantum Interference Device (SQUID) and a Giant Magneto Resistive (GMR) sensor are well known in this field. A SQUID has extremely high magnetic sensitivity (500 nA, <40 pT/ √Hz)[1], but the spatial resolution is somewhat problematic due to the clearance that is needed for cooling and vacuuming mechanism. A GMR sensor has higher resolution but lower sensitivity (50 uA, <10 nT/√Hz)[1] and, they have less flexibility because the sensor/stage has to be scanned during operation. In this paper, we present a new current imaging method called Magneto-Optical (MO) Frequency Mapping (MOFM). The imaging is based on a laser beam scanning, which allows flexibility and ease of use. The MO signal intensity is inversely proportional to the distance between the sensor and the current path to be detected. Since it can be 10 um or less, i.e., one half of the MO crystal thickness, it practically makes the MOFM’s system sensitivity is 10 uA, it only 20 times lower than a SQUID method, even though the intrinsic sensitivity may be about 250 times or so lower. It can also achieve high special resolution as with the GMR sensor because of the short distance or clearance needed to sense the current. These characteristics are verified with a TEG sample and we present a case in which it is applied for the short circuit failure localization.

In this paper, we evaluate a novel, position-sensitive, singlephoton detector with enhanced Near InfraRed (NIR) sensitivity [1-3] for taking 2D Time Resolved Emission (TRE), also known as Picosecond Imaging for Circuit Analysis (PICA), in future low voltage SOI technologies. In particular, we will investigate and quantify the sensitivity of two generations (Gen. I and Gen. II) of PICA cameras by Hamamatsu Photonics as a function of the power supply voltage on an IBM 45 nm SOI test chip. Additionally, we will compare the results to the performance obtained with an InGaAs Single Photon Avalanche Diode (SPAD) from DCG Systems [4]. Finally we will show a case study and an advanced analysis and localization technique that takes advantage of the 2D capability of the camera.