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Proceedings Papers
Inter Layer Dielectric Defect Induced High Contact Resistance
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ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 54-57, November 14–18, 2010,
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High contact resistance can be caused by moisture absorption in low phosphorus content BPTEOS. Moisture diffused through the TiN glue layer is absorbed by the BPTEOS during subsequent thermal processes resulting in increased contact resistance. This failure mode was studied by combining different failure analysis methods and was confirmed by duplication on experimental wafers.