This paper describes how lock-in amplifiers and boxcar averaging can overcome limitations in conventional fault isolation techniques for microelectronic testing. Our approach achieves superior results compared to traditional spectrum analyzer methods through three key applications. First, we measure the signal-to-noise ratio of individual pulses during laser voltage tracing (LVT) across varying pulse widths. Second, we leverage enhanced LVT imaging to improve computer-aided design to stage alignment and laser voltage probe placement—a crucial advancement for analyzing compressed scan and streaming scan network test failures. Finally, we present a case where our Lock-In amplifier system successfully generates pass/fail signals for dynamic laser stimulation in scenarios where conventional test hardware proved inadequate.

Failure analysis engineers apply a combination of conventional static fault isolation tools such as OBIRCH, PEM, or lock-in thermography (LIT) to detect simple short defects. However, if the defect is located in a complex circuit, analysis can be more challenging. Laser voltage probing and imaging (LVx) is widely used but will have difficulty in localizing a defect in the backend layers. The combination of LVx and LIT can resolve complex short cases that either of these techniques alone cannot easily do. This paper introduces the thermal effect of LVx and applications of LIT for functional analysis, and it describes and provides case histories for complementary fault isolation procedures for detecting defects in metal layers and transistors.

Lock-in techniques enable the detection of very small signals in a background that can be dominated by noise. This strength makes these techniques valuable especially for failure analysis of active devices where the deviation may be difficult to detect. This paper describes novel use case applications in which the lock-in amplifier plays a key role. The case studies covered are multi-frequency mapping fault isolation with nonperiodic patterns and frequency resonance measurement of a micro electro-mechanical system (MEMS) gyroscope. The paper presents how lock-in amplifiers enable digital failure analysis using compressed scan patterns. It reports on using a lock-in to characterize a MEMS gyroscope and on how to directly observe the gyroscope motion using phase laser voltage imaging/electro-optical frequency mapping. It can be concluded that the lock-in techniques form an essential part of the failure analysis toolkit and will only be more so with this study.

Laser-based dynamic analysis has become a very important tool for analyzing advanced process technology and complex circuit design. Thus, many good reference papers discuss high resolution, high sensitivity, and useful applications. However, proper interpretation of the measurement is important as well to understand the failure behavior and find the root cause. This paper demonstrates this importance by describing two insightful case studies with unique observations from laser voltage imaging/laser voltage probing (LVP), optical beam induced resistance change, and soft defect localization (SDL) analysis, which required an in-depth interpretation of the failure analysis (FA) results. The first case is a sawtooth LVP signal induced by a metal short. The second case, a mismatched result between an LVP and SDL analysis, is a good case of unusual LVP data induced by a very sensitive response to laser light. The two cases provide a good reference on how to properly explain FA results.

We report on the use of Fresnel lenses in the failure analysis (FA) of actual failures. The design parameters affecting the performance of Fresnel lenses in terms of resolution, magnification, and field of view have been analyzed. It is demonstrated that the magnification depends linearly on the change in focus distance caused by the lens, normalized by the silicon thickness. The focus distance shift that can be obtained with the Fresnel lens is observed to saturate, whose root-cause remains to be investigated. The field of view is shown to increase with the silicon thickness and, to a lesser extent, with the number of lens rings. It has also been shown that these lenses are robust against patterning distortions. The OBIRCh responses of actual device failures before and after lens placement have been compared, demonstrating clearly the increase in magnification, resolution, and the ability to focus light which all translate into a better electrical fault isolation. All in all, this study proves the usefulness of Fresnel lenses for FA purposes and offers clear guidelines that will facilitate proper lens design.

In the case of conventional planar FET, Dynamic Laser Stimulation (DLS) is a very effective method to isolate marginal failure. Depending on laser sources, DLS is divided by Soft Defect Localization (SDL) and Laser Assisted Device Alteration (LADA). SDL uses 1320nm wavelength laser source in order to induce localized heat. On the other hand, LADA uses 1064nm wavelength laser source to generate photo carriers. But for the FinFET the effect of laser stimulation is not clear yet. This paper introduces the effect of laser stimulation on FinFET transistors based on wavelength, the so called LADA and two-photon LADA. The experimental data show changes in Vth and Idsat with different character for a single FinFET transistor. A case study further explains this laser stimulation effect via scan chain LVcc marginal failure analysis localized with 1320nm CW laser stimulation and nano-probing analysis.

During the early stage of process development, the major activities are yield ramp up with DFT test such as Memory BIST and SCAN test. There are plenty of commercial and inhouse diagnostics tools for DFT so in case of failure FA procedures are rather simple and standardized: run EDA tool, get fail location, perform pFA then feedback to process engineering. However in the case of marginal failure FA procedures are generally more complicated. FA engineer should consider many different scenarios to find the root cause. The marginal voltage fail is caused by many different reasons. The analysis of marginal fail is of course very important to screen out healthy devices and detect any problem of process technology or design methodology. In this paper, the authors deal with three marginal voltage fail case studies: scan chain fail, digital function fail and analog function fail. Throughout these case studies, LADA was successfully used to define the fault location. The reason of device alteration was well explained with further study. It is obvious that LADA is a very effective way to analyze marginal failures in cases where the FA engineer doesn’t have much design information because the results are very intuitive and clear. There is little doubt of LADA results accuracy because LADA is utilizing the tester to make an accurate Pass/Fail decision. LADA results are direct indication of device sensitivity to parametric changes, in our case voltage margin.