Presentation slides for the ISTFA 2023 Tutorial session “Fundamentals of Nanoprobe Analysis.”

State-of-the-art semiconductor technologies use multiple copper metallization layers to route power and signals throughout the semiconductor device. These devices have four to six metal layers with the top layers predominately used to route the large power supply lines. To gain access to these lower signal lines, focused ion beam (FIB) must be used to cut large windows through the large power supply lines; this is very difficult. This paper demonstrates how EKC265 can be used as a copper metal etch to remove the copper of the power supply lines. This allows the FIB to cut large windows through the material layers to gain access to the lower metal layers for probing or FIB edits. Results are shown for FIB work using EKC265 and for FIB work without the using EKC265. EKC265 eliminates the need to use the FIB to remove copper giving a much more uniform milling result.

Atomic force probing (AFP) uses very sharp tungsten tips (100nm in radius) which wear out rather quickly, even with the greater durability of tungsten as compared to silicon. This paper demonstrates how worn tips that no longer image and probe properly can be reconditioned using the focus ion beam (FIB) tool. The method works best for tips that are under approx. 750nm in diameter and are not bent. It works well for freshly manufactured tips that do not work properly due to mishandling or improper storage which allowed particulates/oxide to build up on the tip. The method also works well for fresh tips that have been worn down (or slightly bent) after several hours of scanning and probing. This method is straightforward and requires a minimal amount of time. Typically, four probe tips can be reconditioned in about 30 minutes on the FIB.