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Rainer Leihkauf
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Proceedings Papers
ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 21-26, November 15–19, 2009,
Abstract
View Papertitled, Extended Circuit Edit, Analysis and Trimming Capabilities Based on the Backside Focused Ion Beam Created Ultra Thin Silicon Platform
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for content titled, Extended Circuit Edit, Analysis and Trimming Capabilities Based on the Backside Focused Ion Beam Created Ultra Thin Silicon Platform
Highly integrated microelectronic devices drive an ever increasing effort in engineering, manufacturing and failure analysis. Almost all established failure analysis techniques and conventional circuit edit procedures are facing the severe challenges and limits of aggressive downscaling. While device design and manufacturing cooperate closely, failure analysis often is considered as an add-on service upon request. If physical limitations are hard to overcome, extending the application of an established method to promote synergy with other aspects of IC making is one option for future progress. Traditionally circuit edit FIB is a post-fix procedure to allow for fast design changes in the wiring of a chip. Device performance remains unchanged. A different aspect is the deposition of FIB probe pads which permits electrical probing in locations difficult to reach. Probing results in critical regions of a circuit provide tremendous value for general debug or first silicon analysis. Device performance can be monitored. This paper adds a another dimension with new CE and functional chip analysis techniques where device performance can be directly monitored and altered; therefore connecting integrated circuit design, device development and failure analysis for shorter development cycles.