In the hypersonic plasma particle deposition process, vapor phase reactants are injected into a plasma and rapidly quenched in a supersonic nozzle, leading to nucleation of nanosize particles. These particles impact a substrate at high velocity, forming a coating with grain sizes of 10 to 40 nm. As previously reported, coatings of a variety of materials have been obtained, including silicon, silicon carbide, titanium carbide and nitride, and composites of these, all deposited at very high rates. Recent studies have shown that slight modifications of the process can result in nanosize structures consisting of single crystal silicon nanowires covered with nanoparticles. These nanowires are believed to grow in a vapor deposition process, catalyzed by the presence of titanium in the underlying nanoparticle film. However, simultaneously nanoparticles are nucleated in the nozzle and deposited on the nanowires, leading to structures that are the result of a plasma CVD process combined with a nanoparticle spray process. The combination of these two process paths opens new dimensions in nanophase materials processing.

A novel plasma spray process for producing nanostructured coatings, hypersonic plasma particle deposition (HPPD), has been experimentally investigated. In HPPD, vapor phase precursors are injected into a plasma stream generated by a DC arc. The plasma is quenched by supersonic expansion through a nozzle into a vacuum (~ 2 torr) deposition chamber. Ultrafine particles nucleated in the nozzle are accelerated in the hypersonic free jet downstream of the nozzle and inertially deposited onto a substrate. The short transit times between the nozzle and the substrate (< 50 μs) prevent inflight agglomeration, while the high particle deposition velocities result in the formation of a consolidated coating. We have investigated the production of silicon and silicon carbide coatings using SiCl 4 and CH 4 precursors. Silicon deposits analyzed by transmission electron microscopy were found to have nanostructured regions with grain sizes varying from 5-20 nm. Corresponding particle size distributions measured before deposition using an extractive aerosol probe peaked around 15 nm, suggesting negligible grain growth occurred in the samples studied. Silicon carbide particle size distributions measured at various deposition chamber pressures verify that the low residence time characteristic of the HPPD process minimizes in-flight agglomeration.