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1-2 of 2
Ong Pei Hoon
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Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 392-395, October 30–November 3, 2022,
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Copper (Cu) material was extensively studied in the past years and widely implemented in high volume wire bonding process as a replacement of Gold (Au) material during semiconductor device fabrication. No doubt, Cu wire provide low cost alternative to gold with higher thermal and electrical conductivity, but it does pose some drawback especially after reliability stress. One of the most common problem was ball lifted after component gone through several reliability stress tests. In this paper, several FA analytical techniques and procedures will be discussed in detail to demonstrate the use of these techniques in ball lifting investigation.
Proceedings Papers
ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 525-529, October 28–November 1, 2018,
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Chemical etching is commonly used in exposing the die surface from die front-side and die backside because of its quick etching time, burr-free and stress-free. However, this technique is risky when performing copper lead frame etching during backside preparation on small and non-exposed die paddle package. The drawback of this technique is that the copper leads will be over etched by 65% Acid Nitric Fuming even though the device’s leads are protected by chemical resistance tape. Consequently, the device is not able to proceed to any other further electrical measurements. Therefore, we introduced mechanical preparation as an alternative solution to replace the existing procedure. With the new method, we are able to ensure the copper leads are intact for the electrical measurements to improve the effectiveness and accuracy of physical failure analysis.