The emergence of three-dimensional (3D) semiconductor devices has increased the importance of thermal imaging techniques. This paper presents a dual-capability system combining thermo-reflectance and thermal lock-in imaging (LIT) for high-speed, highly sensitive thermal analysis. We evaluate the hotspot detection capabilities of two-wavelength thermo-reflectance compared to LIT, including results from actual failure analysis cases. Our findings demonstrate the effectiveness of thermo-reflectance detection (TD) imaging for 3D devices where direct optical access to active layers is limited, such as 3D NAND flash memory and BSP-DN structured devices. This approach offers a promising solution for the thermal characterization of complex 3D semiconductor architectures.

The importance of three-dimensional (3D) localization capability is growing as advanced semiconductor devices go to 3D structures. An algorithm for processing lock-in OBIRCH data was developed especially for 3D/4D memory devices. The concept was tested with a simple test sample, which was confirmed to be capable of generating depth separated images.

High-speed time-resolved emission analysis is an attractive failure analysis technique because of its non-invasiveness. Super-conductive nanowire single photon detector (SNSPD or SSPD) is a key candidate of key device for time-resolved emission analysis. In this paper, we demonstrate time-resolved emission and its application of spatial resolution enhancement. We could confirm that time-resolved emission imaging can enhance spatial resolution by simple mathematical operations compared to static emission analysis, which is effective for finding emission spots before detailed time-resolved data investigations.

Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.