Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Article Type
Volume Subject Area
Date
Availability
1-2 of 2
Nathan Bakken
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 170-175, October 30–November 3, 2022,
Abstract
View Paper
PDF
Reproducible laser-assisted metal deposition with copper hexafluoroacetylacetonate trimethylvinylsilane Cu(hfac) (TMVS) has been demonstrated on a range of relevant semiconductor insulating material surfaces including silicon dioxide (SiO 2 ), crystalline silicon (c-Si), and organic package material such as polyimide and printed circuit board (PCB) FR- 4. A key to reliable and chemically efficient growth is a novel copper chemistry delivery methodology using direct precursor pulsing. The laser power conditions for deposition are strongly correlated to the substrate material, with increased power for the more thermally conductive samples (0.8 – 1.0 W) and significantly less for packaging materials (50 mW). The laser-assisted copper growth results and material properties are comparable to the published literature. Examples of circuit modifications using this methodology demonstrate its valuable role in the future of circuit edit.
Proceedings Papers
ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 454-459, November 10–14, 2019,
Abstract
View Paper
PDF
Infrared optical probing techniques that have significant applications to and continued development for silicon physical debug have existed for decades. More recently, resolution enhancement achieved by improving numerical aperture, etc. have reached fundamental limits and the ability for resolution to match node scaling with radiation transparent to silicon (photon energy < silicon bandgap) becomes diffraction limited for some 10nm and many future process nodes. Decreasing the wavelength used for imaging and signal acquisition can improve resolution; however, it is well documented that absorption increases sharply for photons with energy greater than the bandgap of the bulk substrate material. Significant reduction in the thickness of the backside substrate material can be performed to achieve acceptable transmission through the absorbing substrate, but the requirement for very thin sample preparation significantly modifies the thermal system surrounding active circuitry. Here, high aspect ratio trenches are shown to offer a unique method to take advantage of thick silicon (> 100µm) for lateral heat dissipation as well as thin silicon (< 2µm) for minimally absorbing optical path in close proximity to enable case-by-case preparation methods for postsilicon labs faced with visible light resolution requirements on high power density circuits.