Modern processors rely heavily on memory arrays close to the logical processers to have minimal latencies and highest bandwidth for optimal performance. There are memory arrays in the client and server which are configured to different levels based on the size and latency required for the tasks. These memory arrays are separated into bit lines and word lines to address single bits and retrieve required data from the address of the memory location. In any new server validation, a memory access error can happen if the logical to physical memory address is not confirmed. This can lead to corrupt data and operation failure. We have employed here, novel targeted Focused Ion Beam (FIB) milling techniques for Logical to Physical (L2P) memory addressing validation and correction.

The journey to the circuit layer will be described by first discussing baseline processes of laser assisted chemical etching (LACE) steps before the focused ion beam (FIB) workflow. These LACE processes take advantage of a dual 532 nm continuous wave (CW) and pulse laser system, however limitations and overhead that is transferred over to the FIB operator will be demonstrated. Experiments show an additional third 355 nm ultraviolet (UV) pulse laser process introduction into the workflow can further reduce the remaining silicon thickness (RST) relieving FIB overhead. In addition, complex pulse laser patterning techniques will show a refinement to nonuniform produced silicon. Finally, other pulse laser patterning techniques such as polygon etch capability will allow laser etching around and in-between features to enhance circuit layer accessibility for debug operations.