Presentation slides for the ISTFA 2024 Tutorial session “An Introduction to the FIB as a Microchip Circuit Edit Tool (2024 Update).”

Presentation slides for the ISTFA 2024 Tutorial session “Fundamental Considerations in the Justification, Design and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools (2024 Update).”

Presentation slides for the ISTFA 2023 Tutorial session “An Introduction to the FIB as a Microchip Circuit Edit Tool (2023 Update).”

Presentation slides for the ISTFA 2023 Tutorial session “Fundamental Considerations in the Justification, Design, and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools.”

This presentation introduces the practice of focused ion beam (FIB) chip editing and its power and versatility as a problem-solving tool. It begins with a review of the features and functions of FIB systems, the role of gas chemistry in milling, etching, and deposition, and the use of IR imaging for navigation and targeting. It goes on to identify challenges due to packaging materials, chip-package interactions, and other factors, and in each case, provide alternate approaches and procedures to circumvent potential problems. It also covers advanced practices and methods and assesses potential future advancements.

The workflow of backside IC circuit edits using low and high ion-beam energy is investigated. The imaging capabilities using a high keV beam are superior to that of lower beam energy, even when using low beam currents, on typical ion beam microscopes. In this work, we will test the parametric shift of IC components following the use of 5 keV Gallium Focused Ion Beam (FIB) to expose Shallow Trench Isolation (STI), depositing a protective dielectric layer, and then switching to 30 keV FIB to perform device alteration. Electrical testing results show that the devices exhibit only a minor parametric shift. We present a case study, performing circuit edit on a 7 nm process node using the proposed workflow. Finally, we discuss the advantages of the proposed workflow.

The design and construction of a well-executed laboratory space to house high resolution analytical imaging and processing tools can often be more complex and expensive than anticipated. Unlike their manufacturing counterparts, lab tools as a class have fewer built-in countermeasures to fend off operational degradation caused by external factors. A poorly optimized facility can result in significant underperformance of installed systems, thereby wasting the investment and jeopardizing the mission. Unfortunately, very few assigned laboratory spaces are ‘naturally’ perfect for the installation of new analytical equipment at the outset. It typically takes considerable work to engineer most locations so that the tools function as they should and live up to expectations. The magnitude of the challenge and its true cost and lead time often come as a huge surprise to failure analysis engineers tasked with wearing multiple ‘hats’ while navigating the capital approval process. Being caught off guard in this manner often results in considerable time delay, as well as over-budget or sub-par outcomes. In this paper we offer suggestions on how to revamp the typical capital cycle process for specifying, buying, and installing future laboratory tools. We furthermore aim to produce an abbreviated reference guide for tool owners on facility requirements needed to ensure optimal analytical system performance.

This presentation introduces the practice of focused ion beam (FIB) chip editing and its power and versatility as a problem-solving tool. It begins with a review of the features and functions of FIB systems, the role of gas chemistry in milling, etching, and deposition, and the use of IR imaging for navigation and targeting. It goes on to identify challenges due to packaging materials, chip-package interactions, and other factors, and in each case, provide alternate approaches and procedures to circumvent potential problems. It also covers advanced practices and methods and assesses potential future advancements.

In a previous study, the authors introduced a novel technique of using low-beam energy Gallium Focused Ion Beam to expose a large area of Shallow Trench Isolation (STI) over a Dynamic Ring Oscillator (DRO) incurring virtually no change of its operating frequency. In this paper, the authors further investigate the influence of extended dose delivery of 5 kV Ga+ after the initial exposure of the STI over a DRO on modern 7 nm process. The motivation of this study is to understand the dynamics between the Ga+ ion interaction at lower beam energies on live and functional devices and the failure mechanism of the device from such interaction. The frequency of the DROs after the initial STI exposure at 5 kV exhibits <1% increase. Additional dosage of lowkV exposure was performed over the exposed STI and its effects on the DRO frequency was monitored. Finally TEM analysis of the irradiated DROs will be analyzed to understand the failure mechanism of transistors.