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1-4 of 4
Matthias Petzold
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Proceedings Papers
Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies
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ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 100-105, November 11–15, 2012,
Abstract
View Papertitled, Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies
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for content titled, Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies
New semiconductor chip technologies and technologies for 3D integration require information’s of packaging and interface defects in 3 dimensions, that means the lateral dimension of the defect and the location inside the device or package must be defined. In this paper, new methodical approaches for non destructive failure analysis on 3D integrated TSV samples are introduced. The concepts combine improved scanning acoustic microscopy (SAM) imaging hardware with unique software solutions for defect identification and quantitative analysis of mechanical properties using scanning acoustic investigations. In case of MEMS 3D integration, e.g. based on direct bonding, related interface defects must be investigated by SAM. With respect to 3D integration applications, the potential of recent SAM improvements applying specifically adapted hardware and custom-made signal processing algorithms will be discussed. Examples of SAM-based failure detection techniques for the application in 3D integration are demonstrated. New technologies are shown to improve the through put of fully wafer scanning using scanning acoustic microscopy. To improve the defect resolution, a new transducer design was developed to increase defect resolution and signal to noise for interface characterisation.
Journal Articles
Emerging Techniques for 3-D Integrated System-in-Package Failure Diagnostics
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Journal: EDFA Technical Articles
EDFA Technical Articles (2012) 14 (2): 14–20.
Published: 01 May 2012
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View articletitled, Emerging Techniques for 3-D Integrated System-in-Package Failure Diagnostics
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for article titled, Emerging Techniques for 3-D Integrated System-in-Package Failure Diagnostics
Failure analysis is becoming increasingly difficult with the emergence of 3D integrated packages due to their complex layouts, diverse materials, shrinking dimensions, and tight fits. This article demonstrates several FA techniques, including high-frequency scanning acoustic microscopy, lock-in thermography, and FIB cross-sectioning in combination with plasma ion etching or laser ablation. Detailed case studies show how the various methods can be used to analyze bonding integrity between different materials, chip-to-chip interface structures, buried interconnect defects, and through-silicon vias at either the device or package level.
Proceedings Papers
Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications
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ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 84-91, November 14–18, 2010,
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View Papertitled, Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications
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for content titled, Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications
In industrial manufacturing of microelectronic components, non-destructive failure analysis methods are required for either quality control or for providing a rapid fault isolation and defect localization prior to detailed investigations requiring target preparation. Scanning acoustic microscopy (SAM) is a powerful tool enabling the inspection of internal structures in optically opaque materials non-destructively. In addition, depth specific information can be employed for two- and three-dimensional internal imaging without the need of time consuming tomographic scan procedures. The resolution achievable by acoustic microscopy is depending on parameters of both the test equipment and the sample under investigation. However, if applying acoustic microscopy for pure intensity imaging most of its potential remains unused. The aim of the current work was the development of a comprehensive analysis toolbox for extending the application of SAM by employing its full potential. Thus, typical case examples representing different fields of application were considered ranging from high density interconnect flip-chip devices over wafer-bonded components to solder tape connectors of a photovoltaic (PV) solar panel. The progress achieved during this work can be split into three categories: Signal Analysis and Parametric Imaging (SA-PI), Signal Analysis and Defect Evaluation (SA-DE) and Image Processing and Resolution Enhancement (IP-RE). Data acquisition was performed using a commercially available scanning acoustic microscope equipped with several ultrasonic transducers covering the frequency range from 15 MHz to 175 MHz. The acoustic data recorded were subjected to sophisticated algorithms operating in time-, frequency- and spatial domain for performing signal- and image analysis. In all three of the presented applications acoustic microscopy combined with signal- and image processing algorithms proved to be a powerful tool for non-destructive inspection.
Proceedings Papers
Characterization and Failure Analysis of 3D Integrated Semiconductor Devices—Novel Tools for Fault Isolation, Target Preparation and High Resolution Material Analysis
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ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 163-170, November 14–18, 2010,
Abstract
View Papertitled, Characterization and Failure Analysis of 3D Integrated Semiconductor Devices—Novel Tools for Fault Isolation, Target Preparation and High Resolution Material Analysis
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for content titled, Characterization and Failure Analysis of 3D Integrated Semiconductor Devices—Novel Tools for Fault Isolation, Target Preparation and High Resolution Material Analysis
In this paper we will introduce novel methodical approaches for material and failure analysis of 3D integrated devices. The potential and advantages of the new concepts and tools will be demonstrated for flip-chip-like interconnects but in addition, for the first time, for Through Silicon Vias (TSV). The employed techniques combine non-destructive fault localization with efficient and accurate target preparation to get access for following microstructure diagnostics, forming a subsequent failure analysis workflow. The concept presented here involves the application of improved Lock-In Thermography (LIT), and three different innovative concepts of high rate Focused Ion Beam (FIB) techniques.