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M.L. Ray
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Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2024) 26 (4): 20–26.
Published: 01 November 2024
Abstract
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Xenon plasma focused ion beam specimen preparation is ideal for preparing plan view TEM specimens due to its large-volume-milling capabilities. This article describes concentrated Ar ion beam milling using low energy as a post-pFIB final thinning step of plan view TEM specimens from a phase change memory device. Precise control of specimen thinning is achieved, which results in high-quality specimens with pristine surfaces and a large field of view for TEM characterization.
Proceedings Papers
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 191-199, October 28–November 1, 2024,
Abstract
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Electrical characterization is a critical step in the failure analysis workflow, a sequence that often ends in high-resolution imaging in the transmission electron microscope (TEM). Scanning TEM electron beam-induced current (STEM EBIC) is a technique that effectively combines these methods by performing electrical characterization at each imaging pixel, with the electron beam acting as a local current source. This work highlights the specimen preparation technique using the Ga FIB system followed by post-FIB Ar ion milling for STEM EBIC analysis. We present STEM EBIC as a technique to evaluate the surface quality of the specimens and to characterize the electronic properties of advanced devices at high resolution. With STEM EBIC, inactive and active finFET structures were clearly distinguished and improvements in sample quality from post-FIB Ar ion milling were evident.
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 309-316, November 12–16, 2023,
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Advanced memory technologies are in demand with phase change memory (PCM) devices as a forefront candidate. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens is critical. In this work, TEM specimens from a GeTe-based PCM device at a partial SET state were prepared using a Xe plasma focused ion beam (pFIB) and polished to electron transparency using Ar ion beam milling. We will highlight the differences between Ga focused ion beam (FIB) and Xe pFIB TEM specimen preparation, the benefits of post-pFIB Ar ion beam milling, and show TEM results of the effects of partial SET programming of the GeTe PCM device.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 181-189, October 30–November 3, 2022,
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Semiconductor devices are decreasing in dimensions and currently comprise stacks of ultrathin layers as in a spin-transfer torque magnetoresistive random-access memory (STTMRAM) device. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens for is desirable. In this work, we combine plan view Ga focused ion beam (FIB) and post-FIB Ar milling preparation to prepare TEM specimens from a STT-MRAM device. Post-FIB Ar milling technique as a final polishing step of plan view TEM specimens was shown to prevent exposure of the tunnel barrier layer that can be damaged by the Ga FIB beam. We discuss the plan view FIB preparation, post-FIB Ar milling step and image analysis of the TEM images.
Proceedings Papers
ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 135-140, October 31–November 4, 2021,
Abstract
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This paper describes an accurate and controllable delayering process to target defects in new materials and device structures. The workflow is a three-step process consisting of bulk device delayering by broad Ar ion beam milling, followed by plan view specimen preparation using a focused ion beam, then site-specific delayering via concentrated Ar ion beam milling. The end result is a precisely delayered device without sample preparation-induced artifacts suitable for identifying defects during physical failure analysis.
Proceedings Papers
ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 133-140, November 15–19, 2020,
Abstract
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Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.
Proceedings Papers
ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 241-246, October 28–November 1, 2018,
Abstract
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Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.
Proceedings Papers
ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 592-596, November 5–9, 2017,
Abstract
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Conventional mechanical sample preparation is a difficult and uncontrolled process that does not allow targeting of a specific depth or layer. Because of the difficulties presented by mechanical sample preparation, there has been an emergence of beam-based techniques for device delayering applications. Cross-sectioning is another commonly used technique used in microelectronics industry investigations; when combined with delayering, one can gain complete knowledge about a device's faults. This paper presents a development in semiconductor device investigation using low energy, broad-beam argon ion milling. The results highlight that broad-beam Ar ion milling produces excellent surface quality, which allows high resolution scanning electron microscope observation and energy dispersive spectrometry analyses, even at low energy.