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M. Skowronski
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Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2024) 26 (4): 20–26.
Published: 01 November 2024
Abstract
View articletitled, Precise Final Specimen Thinning by Concentrated Argon Ion Beam Milling of Plan View TEM Specimens Prepared in the Xenon Plasma FIB
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for article titled, Precise Final Specimen Thinning by Concentrated Argon Ion Beam Milling of Plan View TEM Specimens Prepared in the Xenon Plasma FIB
Xenon plasma focused ion beam specimen preparation is ideal for preparing plan view TEM specimens due to its large-volume-milling capabilities. This article describes concentrated Ar ion beam milling using low energy as a post-pFIB final thinning step of plan view TEM specimens from a phase change memory device. Precise control of specimen thinning is achieved, which results in high-quality specimens with pristine surfaces and a large field of view for TEM characterization.
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 309-316, November 12–16, 2023,
Abstract
View Papertitled, Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB
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for content titled, Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB
Advanced memory technologies are in demand with phase change memory (PCM) devices as a forefront candidate. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens is critical. In this work, TEM specimens from a GeTe-based PCM device at a partial SET state were prepared using a Xe plasma focused ion beam (pFIB) and polished to electron transparency using Ar ion beam milling. We will highlight the differences between Ga focused ion beam (FIB) and Xe pFIB TEM specimen preparation, the benefits of post-pFIB Ar ion beam milling, and show TEM results of the effects of partial SET programming of the GeTe PCM device.
