This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions inside an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed laser on a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals possible bipolar transistor activation at high laser power. This activation threshold revealed its dependence on laser power and wells biasing. Based on the measurements made during our experiments, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation.

This study responds to our need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus it is mandatory to understand the behavior of elementary devices under laser stimulation, in order to model and anticipate the behavior of more complex circuits. This paper characterizes and analyses effects induced by a static photoelectric laser on a 90 nm technology PMOS transistor. Comparisons between currents induced in short or long channel transistors for both ON and OFF states are made. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses. These physical simulations give a physical insight of carriers generation and charge transport phenomena in the devices.

This paper presents the electrical model of an NMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures and from the results of physical simulation using Finite Element Modeling (TCAD). The latter is a useful tool in order to understand and correlate the effects seen by measurement by given a physical insight of carrier generation and transport in devices. This electrical model enables to simulate the effect of a continuous laser wave on an NMOS transistor by taking into account the laser’s parameters (i.e. spot size and power), spatial parameters (i.e. the spot location and the NMOS’ geometry) and the NMOS’ bias. It offers a significant gain of time for experiment processes and makes it possible to build 3D photocurrent cartographies generated by the laser on the NMOS, in order to predict its response independently of the laser beam location.