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M. Boccabella
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Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 414-421, October 30–November 3, 2022,
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We describe a fully integrated solution for millimeter-scale delayering of both logic and memory semiconductor devices. The flatness of the delayered device is controlled by an artificial intelligence algorithm, which uses feedback from multiple analytical detectors to control milling parameter adjustments in real time. The result is the precise removal of device layers and a highly planar surface.
Proceedings Papers
ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 260-264, November 5–9, 2017,
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The semiconductor industry is constantly investigating new methods that can improve both the quality of TEM lamella and the speed at which they can be created. To improve throughput, a combination of FIB-based preparation and ex situ lift-out (EXLO) techniques have been used. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we present low-energy (<1 keV), narrow-beam (<1 μm diameter), Ar+ ion milling as a method of preparing electron-transparent and gallium-free EXLO FIB specimens.
Proceedings Papers
ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 375-379, November 5–9, 2017,
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The sub-nanometer resolution that transmission electron microscopy (TEM) provides is critical to the development and fabrication of advanced integrated circuits. TEM specimens are usually prepared using the focused ion beam, which can cause gallium-induced artifacts and amorphization. This work presents the use of a concentrated argon ion beam for reproducible TEM specimen preparation using automatic milling termination and targeted ion milling of device features; the result is high-quality and electron-transparent specimens of less than 30 nm. Such work is relevant for semiconductor product development and failure analysis.