Sub-nanometer focused inert gas ions derived from a Gas Field Ion Source (GFIS) contain properties that can improve the dimensional and conductivity characteristics of ion beam deposited platinum circuit edit wiring. The following paper, presents ion interaction simulations that help provide insight into the factors which determine the ultimate wire width, resistivity, and metal deposition rates. An experimental result that has aided in the understanding of the primary wire width limiting mechanism is also presented. Finally, a description of the ion beam and precursor properties used for the platinum deposition is provided, a long with a discussion of the wire resistivity measurement technique and challenges. To conclude, the prospects for GFIS ion induced dielectric and metal deposition for circuit edit and nanofabrication applications are discussed.

Currently, the helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. This paper will provide an overview of microscope’s ion source, its ion optics, the system architecture, the fundamentals of these three imaging modes and many FA related examples. Recently integrated with the microscope are a Rutherford Backscatter (RBS) detector for materials analysis and a gas injection system (GIS) for material modification. We will describe this new hardware and suggest how these additions could also contribute to the helium ion microscope being an important failure analysis tool.