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Lai Li-Lung
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Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2011) 13 (2): 20–27.
Published: 01 May 2011
Abstract
View articletitled, Commentary on Applications of EDS in Silicon IC Manufacturing and Failure Analysis
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for article titled, Commentary on Applications of EDS in Silicon IC Manufacturing and Failure Analysis
This article provides a practical overview of energy-dispersive spectroscopy (EDS) and its various uses in semiconductor device manufacturing and failure analysis. It explains how EDS techniques are typically implemented, compares and contrasts different methods, and discusses the factors that determine spatial and energy resolution, measurement depth, sensitivity, signal-to-noise ratio, and ease of use.
Proceedings Papers
ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 202-207, November 15–19, 2009,
Abstract
View Papertitled, Surface Effect on SEM Voltage Contrast and Dopant Contrast
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for content titled, Surface Effect on SEM Voltage Contrast and Dopant Contrast
The Voltage Contrast (VC) [1-3] and Dopant Contrast [4-7] in Scanning Electron Microscopy (SEM) [8] have been widely used in the Silicon (Si) semiconductor manufacturing field to localize the failure site from plane-view and inspect the doping profile along cross-section with spatial resolution in the nanometer (nm) range. In this article, we demonstrate how the surface effect, such as topography or material variation, impacts the conventional prediction for the voltage and dopant contrast in the SEM images. The mechanisms and applications for the SRAM and real products are described.