Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Article Type
Volume Subject Area
Date
Availability
1-2 of 2
L. H. An
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 63-68, November 12–16, 2000,
Abstract
View Paper
PDF
In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.
Proceedings Papers
ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 369-372, November 12–16, 2000,
Abstract
View Paper
PDF
In our previous paper [1], discolored bondpads due to galvanic corrosion were studied. The results showed that the galvanic corrosion occurred in 0.8 ìm wafer fabrication (fab) process with cold Al alloy (Al-Si, 0.8 wt%-Cu, 0.5 wt%) metallization. Galvanic corrosion is also known as a two-metal corrosion and it could be due to either wafer fab process or assembly process. Our initial suspicion was that it was due to a DI water problem during wafer sawing at assembly process. After that, we did further failure analysis and investigation work on galvanic corrosion of bondpads and further found that galvanic corrosion might be due to longer rinsing time of DI water during wafer sawing. The rinsing time of DI water is related to the cutting time of wafer sawing. Therefore, some experiments of wafer sawing process were done by using different sizes of wafer (1/8 of wafer, a quadrant of wafer and whole of wafer) and different sawing speed (feed-rate). The results showed that if the cutting time was longer than 25 minutes, galvanic corrosion occurred on bondpads. However, if the cutting time was shorter than 25 minutes, galvanic corrosion was eliminated. Based on the experimental results, it is concluded that in order to prevent galvanic corrosion of bondpads, it is necessary to select higher feed-rate during wafer sawing process at assembly houses. In this paper, we will report the details of failure analysis and simulation experimental results, including the solution to eliminate galvanic corrosion of bondpads during wafer sawing at assembly houses.