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Keith Serrels
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Proceedings Papers
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 205-212, October 28–November 1, 2024,
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We demonstrate the effectiveness of combining top-down and cross-sectional electron beam induced current (EBIC) imaging with SEM nanoprobe analysis to identify subtle front-end defects in advanced FinFET technology. Our approach successfully localized a novel fin nanocrack defect that had previously eluded detection through conventional TEM imaging. This systematic resistive pMOS failure, observable only in memory arrays at 150°C, exemplifies the power of EBIC as an alternative to scanning capacitance microscopy for detecting dopant anomalies and subtle defects. The sample preparation and EBIC methodologies presented here are broadly applicable across CMOS technologies, offering a versatile approach to defect analysis.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2022) 24 (4): 58–59.
Published: 01 November 2022
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This column describes the structure and process being followed by the councils working on the Failure Analysis Technology Roadmap at the direction of the EDFAS Board. The FA Roadmap activity was recently restructured to establish three Councils: Die-Level Roadmap Council (DLRC), Package Innovation Roadmap Council (PIRC), and an FA Future Roadmap Council (FAFRC). To incorporate a common FA workflow, the DLRC will host two separate domain teams: Isolation and Post-Isolation Domain. The column describes the FA Roadmap work conducted at the ISTFA 2022 Conference and activities planned for 2023.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 144-152, October 30–November 3, 2022,
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Laser Voltage Probing (LVP) is an essential Failure Analysis (FA) technique that has been widely adopted by the industry. Waveforms that are collected allow for the analyst to understand various internal failure modes related to timing or abnormal circuit behavior. As technology nodes shrink to the point where multiple transistors reside within the diffraction-limited laser spot size, interpretation of the waveforms can become extremely difficult. In this paper we discuss some of the evolving challenges faced by LVP and propose a new technique known as Differential LVP (dLVP) that can be used to debug marginal failing devices that exhibit a pass/fail boundary in their shmoo plot. We demonstrate how separate pass and fail LVP waveforms can be collected simultaneously and compared to immediately identify whether logic is corrupted and when the corruption occurs. The benefits of this new technique are many. They include guarantees of equivalent pass vs. fail data independent of crosstalk, system noise, stage drift, probe placement, temperature effects, or the diffraction-limited resolution of the probe system. Implementing dLVP into existing tools could extend their effective lifetimes and improve their efficacy related to the demands posed by the debug of 5nm technologies and smaller geometries. We anticipate that fully integrated and evolved dLVP will complement workhorse FA applications such as Laser Assisted Device Alteration (LADA) and Soft Defect Localization (SDL) analysis. Wherein those techniques map timing marginalities propagating to, and observed by, a capture flop, dLVP can extend such capabilities by identifying the first instance of corrupted logic inside the flop and map the corruption all the way to the chip output pin.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2021) 23 (3): 51–52.
Published: 01 August 2021
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This column discusses past, present, and future activities associated with the development of the EDFAS FA Technology Roadmap.
Proceedings Papers
ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 228-237, November 5–9, 2017,
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We present an upgraded time-resolved LADA system, with a 25ps pulsed laser, integrated into a commercial laser scanning microscope used in failure analysis. We demonstrate the use of this system on 14nm/16nm finfet devices.