Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Journal
Article Type
Volume Subject Area
Date
Availability
1-7 of 7
Jesse Alton
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 289-293, October 30–November 3, 2022,
Abstract
View Paper
PDF
The high temperatures and thermal cycling experienced by integrated circuit packages can induce warpage that in turn can lead to cracks developing at material interfaces that compromise the integrity of electrical traces within the device. In this study, the authors demonstrate how Electro-Optical Terahertz Pulsed Reflectometry (EOTPR) with dynamic temperature control can be used to localize and characterize the resistive faults created by such thermally induced cracks. The EOTPR technique provides quick, reliable, and accurate results, and it allows automatic probing that can be used to generate defect maps for further root cause analysis. The approach demonstrated in this paper shows the significant potential of EOTPR in soft failure characterization and in failure and reliability analysis.
Proceedings Papers
ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 245-249, November 15–19, 2020,
Abstract
View Paper
PDF
A typical workflow for advanced package failure analysis usually focuses around two key sequential steps: defect localization and defect characterization. Defect localization can be achieved using a number of complementary techniques, but electro optical terahertz pulse reflectometry (EOTPR) has emerged as a powerful solution. This paper shows how the EOTPR approach can be extended to provide solutions for the growing complexity of advanced packages. First, it demonstrates how localization of defects can be performed in traces without an external connection, through the use of an innovative cross-sectional probing with EOTPR. Then, the paper shows that EOTPR simulation can be used to extract the interface resistance, granting an alternative way of quantitative defect characterization using EOTPR without the destructive physical analysis. These novel approaches showed the great potential of EOTPR in failure analysis and reliability analysis of advanced packaging.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2018) 20 (4): 24–29.
Published: 01 November 2018
Abstract
View article
PDF
Electro optical terahertz pulse reflectometry (EOTPR) is a nondestructive fault isolation technique that is well suited for today’s ICs. This article provides examples of how EOTPR is being used to investigate 2.5D and 3D packages, wafer level fanout packages, and MEMS devices. It also discusses recent advancements in EOTPR systems and software.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2016) 18 (4): 30–40.
Published: 01 November 2016
Abstract
View article
PDF
The complexity of sample preparation and deprocessing has risen exponentially with the emergence of 2.5-D and 3D packages. This article provides answers and insights on how to deal with the challenges of increasingly complex semiconductor packages. After identifying pressing issues and potential bottlenecks with state-of-the-art FA flows, the authors present two case studies demonstrating the capabilities of electro-optical terahertz pulse reflectometry (EOTPR), plasma FIB milling, and 3D X-ray imaging. The FA results confirm the potential of all three techniques and indicate that a fully nondestructive integration flow for 3D packages may be achievable with further development and optimization.
Proceedings Papers
ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 427-431, November 6–10, 2016,
Abstract
View Paper
PDF
Within this paper, the authors present an adapted FA flow for state-of-the-art Package Failure Analysis for 20nm technology and below. As a key aspect, three methods (EOTPR, 3D Xray & PFIB) are introduced as the next-gen FA standard methods for emerging package technologies such as TSV, u-pillar bumping and stacked-die devices. By showing different types of daily Package FA requests, the paper compares & discusses important factors such as turn-around-time (TAT), success yield and results quality. In the end, an outlook is given how recent developments on these techniques will help to establish a new standard FA flow.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2015) 17 (4): 32–36.
Published: 01 November 2015
Abstract
View article
PDF
This article discusses the concept of a virtual known good device (VKGD) and how it used in the development of advanced 3D packaging. It explains that a VKGD is essentially an electromagnetic model of an IC package, including bumps, interposers, and through-silicon vias. These models, used in conjunction with reflectometry data, help engineers isolate faults in the early stages of IC package development, greatly reducing cycle times.
Proceedings Papers
ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 264-269, November 3–7, 2013,
Abstract
View Paper
PDF
Electro Optical Terahertz Pulse Reflectometry (EOTPR), a terahertz based Time Domain Reflectometry (TDR) technique, has been evaluated on Flip Chip (FC) and 3D packages. The reduced size and complexity of these new generations of advanced IC products necessitate non-destructive techniques with increased fault isolation accuracy. The minimum accuracy achievable with conventional TDR is approximately 1000μm. Here, we show that EOTPR is able to differentiate all of the critical features in a 3D FC package, such as μC4 and Through Silicon Via (TSV), and is capable of producing distance-to-defect accuracy of less than 20μm, a significant improvement over conventional microwave based TDR techniques.