Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Article Type
Volume Subject Area
Date
Availability
1-6 of 6
Hirotoshi Terada
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 220-223, November 12–16, 2023,
Abstract
View Paper
PDF
High-speed time-resolved emission analysis is an attractive failure analysis technique because of its non-invasiveness. Super-conductive nanowire single photon detector (SNSPD or SSPD) is a key candidate of key device for time-resolved emission analysis. In this paper, we demonstrate time-resolved emission and its application of spatial resolution enhancement. We could confirm that time-resolved emission imaging can enhance spatial resolution by simple mathematical operations compared to static emission analysis, which is effective for finding emission spots before detailed time-resolved data investigations.
Proceedings Papers
ISTFA2023, ISTFA 2023: Tutorial Presentations from the 49th International Symposium for Testing and Failure Analysis, t1-t86, November 12–16, 2023,
Abstract
View Paper
PDF
Presentation slides for the ISTFA 2023 Tutorial session “Power Semiconductor Failure Analysis Tutorial.”
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 58-64, October 30–November 3, 2022,
Abstract
View Paper
PDF
Certain device failures are especially difficult to analyze since they can only be reproduced under high speed and high power conditions, while also requiring the removal of standard heat dissipating packaging to get visual access to the chip. In addition to the challenge of heat generation density of devices increasing year by year, small hot spots in actual usage generate heat far in excess of the average, and heat dissipation performance needs to be more efficient and highly uniform. In addition, it is desirable to implement a cooling system that does not overly restrict the number and types of lenses that can be used, such as high and low magnification air gap lenses as well as a solid-immersion lens, which has been one of the challenges of existing systems. This paper reports on the development of a cooling system to address these challenges and to enable failure analysis on a device running at 200 W.
Proceedings Papers
ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 60-64, November 15–19, 2009,
Abstract
View Paper
PDF
Tailoring the angular spectrum with annular illumination and collection can significantly improve integrated circuit analysis with an optical microscope, when combined with solid immersion. We present the development, testing, and optimization of a simple and compact apparatus to implement annular illumination and collection in a Hamamatsu iPHEMOS system. We demonstrated improved imaging of an IBM 45nm silicon-oninsulator circuit, with annular illumination and collection in confocal scanning optical microscopy and widefield microscopy with an InGaAs camera.
Proceedings Papers
ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 221-227, November 12–16, 2006,
Abstract
View Paper
PDF
In the failure analysis of semiconductors, layout analysis to pick up suspect nets is getting to be a time consuming work due to finer wiring pitch and multi-layer structure. This article proposes a failure analysis navigation system (FA-Navigation System), which can make it easier to extract the nets passing through the signals detected by the hardware analysis tool, such as emission microscopes or OBIRCH analysis tools. It introduces the functions of the system and shows some case studies in actual failure analyses. The IDDQ fault diagnosis is especially useful for case studies. The result of the software diagnosis can be loaded in the analysis window of the FA-navigation system, and the system correlates the result to the nets extracted by the hardware analysis and displays coincident nets in a sorted manner to make the failure analysis easier.
Proceedings Papers
ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 325-329, November 2–6, 2003,
Abstract
View Paper
PDF
SIL(Solid Immersion Lens) is well investigated for optical pickup application because of its capability of high resolution. We applied this technique to microscopy, especially for precise observation of semiconductors. And also we applied it to fault isolation techniques like emission microscopy , OBIRCH(Optical Beam Induced Resistance Change) and TIVA,SEI. We found significant enhancement of resolution and sensitvity by using SIL. Applying this technique to emission microscopy, we should be aware of optical absorption charactristics of SIL lens materials. We investigated proper SIL lens materials for emission microscopy and laser scanning applications, and checked performance of Si(Silicon)-SIL and GaP(Gallium phosphide)-SIL. We also compared combinations of some kinds of SILs and detectors like C-CCD(cooled CCD) camera, MCT(HgCdTe) camera and position sensitive detector with InGaAs photo cathode II(image intensifier).