With technology scaling of semiconductor devices and further growth of the integrated circuit (IC) design and function complexity, it is necessary to increase the number of transistors in IC’s chip, layer stacks, and process steps. The last few metal layers of Back End Of Line (BEOL) are usually very thick metal lines (>4μm thickness) and protected with hard Silicon Dioxide (SiO2) material that is formed from (TetraEthyl OrthoSilicate) TEOS as Inter-Metal Dielectric (IMD). In order to perform physical failure analysis (PFA) on the logic or memory, the top thick metal layers must be removed. It is time-consuming to deprocess those thick metal and IMD layers using conventional PFA workflows. In this paper, the Fast Laser Deprocessing Technique (FLDT) is proposed to remove the BEOL thick and stubborn metal layers for memory PFA. The proposed FLDT is a cost-effective and quick way to deprocess a sample for defect identification in PFA.

With continuous scaling of CMOS device dimensions, sample preparation for Transmission Electron Microscope (TEM) analysis becomes increasingly important and challenging as the required sample thickness is less than several tens of nanometers. This paper studies the protection materials for FIB milling to increase the success rate of ex-situ ‘lift-out’ TEM sample preparation on 14nm Fin-Field Effect Transistor (FinFET).

With the scaling of semiconductor devices to nanometer range, ensuring surface uniformity over a large area while performing top down physical delayering has become a greater challenge. In this paper, the application of laser deprocessing technique (LDT) to achieve better surface uniformity as well as for fast deprocessing of sample for defect identification in nanoscale devices are discussed. The proposed laser deprocess technique is a cost-effective and quick way to deprocess sample for defect identification and Transmission Electron Microscopy (TEM) analysis.

Top-down, layer-by-layer de-layering inspection with a mechanical polisher and serial cross-sectional Focused Ion Beam (XFIB) slicing are two common approaches for physical failure analysis (PFA). This paper uses XFIB to perform top-down, layer-by-layer de-layering followed by Scanning Electron Microscope (SEM) inspection. The advantage of the FIB-SEM de-layering technique over mechanical de-layering is better control of the de-layering process. Combining the precise milling capability of the FIB with the real-time imaging capability of the SEM enables the operator to observe the de-layering as it progresses, minimizing the likelihood of removing either too much or too little material. Furthermore, real time SEM view during top-down XFIB de-layering is able to provide a better understanding of how the defects are formed and these findings could then be feedback to the production line for process improvement.