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Greg Johnson
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Proceedings Papers
ISTFA2024, ISTFA 2024: Tutorial Presentations from the 50th International Symposium for Testing and Failure Analysis, j1-j127, October 28–November 1, 2024,
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Presentation slides for the ISTFA 2024 Tutorial session “Defect Localization Methods for Device Characterization and Yield Management.”
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 478-482, November 12–16, 2023,
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Insulated Gate Bipolar Transistors (IGBT) and silicon carbide (SiC) based MOSFETs have become the predominantly used power semiconductors in particular in automotive applications. For failure analysis of such devices, site-specific access to subsurface fault sites is required, as is understanding their construction and junction profiles, and how the device turns on. We have applied focused ion beam-scanning electron microscopy (FIB-SEM) tomography to visualize inner structure and dopant distributions of an IGBT and of a SiC MOSFET in three dimensions (3D). Such 3D data can be used to complement 2D electron beam induced current (EBIC) measurements obtained at site-specific FIB cross-sections in these devices.
Proceedings Papers
ISTFA2023, ISTFA 2023: Tutorial Presentations from the 49th International Symposium for Testing and Failure Analysis, t1-t86, November 12–16, 2023,
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Presentation slides for the ISTFA 2023 Tutorial session “Power Semiconductor Failure Analysis Tutorial.”
Proceedings Papers
ISTFA2022, ISTFA 2022: Tutorial Presentations from the 48th International Symposium for Testing and Failure Analysis, f1-f104, October 30–November 3, 2022,
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This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers passive voltage contrast (PVC), nanoprobing, conductive atomic force microscopy, and photon emission microscopy (PEM). It describes signal types, how the measurements are made, the sensing mechanisms involved, and the output that can be expected.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 319-323, October 30–November 3, 2022,
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Microscopic imaging and characterization of semiconductor devices and material properties often begin with a sample preparation step. A variety of sample preparation methods such as mechanical lapping and broad ion beam (BIB) milling have been widely used in physical failure analysis (FPA) workflows, allowing internal defects to be analyzed with high-resolution scanning electron microscopy (SEM). However, these traditional methods become less effective for more complicated semiconductor devices, because the cross-sectioning accuracy and reliability do not satisfy the need to inspect nanometer scale structures. Recent trends on multi-chip stacking and heterogenous integration exacerbate the ineffectiveness. Additionally, the surface prepared by these methods are not sufficient for high-resolution imaging, often resulting in distorted sample information. In this work, we report a novel correlative workflow to improve the cross-sectioning accuracy and generate distortion-free surface for SEM analysis. Several semiconductor samples were imaged with 3D X-ray microscopy (XRM) in a non-destructive manner, yielding volumetric data for users to visualize and navigate at submicron accuracy in three dimensions. With the XRM data to serve as 3D maps of true package structures, the possibility to miss or destroy the fault regions is largely eliminated in PFA workflows. In addition to the correlative workflow, we will also demonstrate a proprietary micromachining process which is capable of preparing deformation-free surfaces for SEM analysis.
Proceedings Papers
ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, f1-f134, October 31–November 4, 2021,
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This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers electron beam absorbed current (EBAC), electron beam induced current (EBIC), passive voltage contrast (PVC), optical and electron beam induced resistance change methods (OBIRCH and EBIRCH), lock-in thermography, photon emission microscopy (PEM), and nanoprobing. It describes how the measurements are made, the sensing mechanisms involved, and the output that can be expected.