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Giuseppe Sciuto
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Proceedings Papers
Gregory M. Johnson, Andreas Rummel, Pietro Paolo Barbarino, Giuseppe Sciuto, Massimiliano Astuto ...
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 463-468, October 28–November 1, 2024,
Abstract
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An innovative method of characterizing p/n junctions and finding defects in SiC MOSFETs is discussed. First, a baseline technique is considered, which involves OBIRCH analysis of shorting paths after etching off the surface metal. The resolution, however, is not satisfactory. Top surface EBIC and EBIRCH results are then presented. Single-probe imaging with EBIC on gates with a 25 kV SEM (Scanning Electronic Microscopy) is shown to be able to image sub-surface depletion zones in the sample. Further measurements by EBIRCH isolated the precise spot of the defect.
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 92-100, November 12–16, 2023,
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Power MOSFETs are electronic devices that are commonly used as switches or amplifiers in power electronics applications such as motor control, audio amplifiers, power supplies and illumination systems. During the fabrication process, impurities such as copper can become incorporated into the device structure, giving rise to defects in crystal lattice and creating localized areas of high resistance or conductivity. In this work we present a multiscale and multimodal correlative microscopy workflow for the characterization of copper inclusions found in the epitaxial layer in power MOSFETs combining Light Microscopy (LM), non-destructive 3D X-ray Microscopy (XRM), Focused-Ion Beam Scanning Electron Microscopy (FIB-SEM) tomography coupled with Energy Dispersive X-ray Spectroscopy (EDX), and Transmission Electron Microscopy (TEM) coupled with Electron Energy Loss Spectroscopy (EELS). Thanks to this approach of correlating 2D and 3D morphological insights with chemical information, a comprehensive and multiscale understanding of copper segregations distribution and effects at the structural level of the power MOSFETs can be achieved.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 201-205, October 30–November 3, 2022,
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In this work we present a new approach in physical failure analysis. Fault isolation can be done using volume diagnosis techniques. But when studying the identified defect sites by Focused Ion Beam (FIB) cross-sectioning, correct interpretation of the cross-sectional views strongly relies on choosing an appropriate cutting strategy. However, volume diagnosis techniques do not provide any information on which cutting directions and settings to choose to avoid misinterpretation of the spatial evolution of the defects. The proposed approach is to acquire FIB-SEM tomographic datasets at the defect sites to unequivocally characterize the defects in three-dimensional visualizations, independent of particular cross-sectioning strategies. In this specific case we have applied the methodology at a microcontroller for automotive applications on which a couple of floating VIAS were found. Thanks to the complete information obtained with the tomography, the defect could be assigned to a specific class of etching tools, and the root cause thus be solved.