Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Article Type
Volume Subject Area
Date
Availability
1-2 of 2
Giuseppe Anastasi
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 92-100, November 12–16, 2023,
Abstract
View Paper
PDF
Power MOSFETs are electronic devices that are commonly used as switches or amplifiers in power electronics applications such as motor control, audio amplifiers, power supplies and illumination systems. During the fabrication process, impurities such as copper can become incorporated into the device structure, giving rise to defects in crystal lattice and creating localized areas of high resistance or conductivity. In this work we present a multiscale and multimodal correlative microscopy workflow for the characterization of copper inclusions found in the epitaxial layer in power MOSFETs combining Light Microscopy (LM), non-destructive 3D X-ray Microscopy (XRM), Focused-Ion Beam Scanning Electron Microscopy (FIB-SEM) tomography coupled with Energy Dispersive X-ray Spectroscopy (EDX), and Transmission Electron Microscopy (TEM) coupled with Electron Energy Loss Spectroscopy (EELS). Thanks to this approach of correlating 2D and 3D morphological insights with chemical information, a comprehensive and multiscale understanding of copper segregations distribution and effects at the structural level of the power MOSFETs can be achieved.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 97-99, October 30–November 3, 2022,
Abstract
View Paper
PDF
In this work we have investigated the results obtained using fault isolation techniques such as EMMI, OBIRCH and OBIC on a Wide band gap power device and in particular a 4H-SiC. We used YLF laser and Green Laser and showed the differences in the resulting hot spots. In the selected point, FIB cross sectioning and EDS analysis was performed. Once that the defect was shown, the differences the fault isolation results were discussed.