Laser-based failure-analysis techniques such as optical beam-induced current (OBIC) or optical beam-induced resistance change (OBIRCH) involve scanning a focused laser beam across a sample by means of a laser scanning microscope (LSM). In this paper, we demonstrate a new method of obtaining OBIC data without requiring a laser or an LSM. Instead, we employ new techniques from the field of compressive sensing (CS). We use an incoherent light source and a spatial light modulator in an image plane of the device under test, supplying a series of pseudo-random on/off illumination patterns (structured illumination) and recording the resulting electrical (photocurrent) signals from the device. Advanced algorithms allow us to reconstruct the signal for the entire die. We present results from OBIC measurements on a discrete transistor and discuss extensions of CS techniques to OBIRCH. We also demonstrate static emission images obtained using CS techniques in which the incoherent light source is replaced with a single-element infrared photon detector so that no detector array is required.

In this paper, we demonstrate two applications of time-resolved emission (TRE): measurement of dynamic, local power-supply (Vdd) variations, and synchronous timing jitter induced by Vdd variations. The first technique measures the height of many peaks within a TRE waveform; differences in peak height are correlated with inter- pulse differences in Vdd. The second technique measures the timing of all of the peaks and extracts the inter-pulse timing variations. The measurement was automated and was performed on long (multiple-μs) acquisition windows containing hundreds of emission peaks. Our work advances the state of the art by using the peak heights and positions to extract this information, and by performing the measurements in an automated fashion.

With the advent of C4 packaging technology, Intel has developed, in conjunction with a technology partner, an integrated, laser-based optical backside probing system. This article begins with a description of the basic system operation. This is followed by a discussion on the electro-optic effect in CMOS, which is used for the signal acquisition. The question of invasiveness of the photo-injected carriers is then discussed. Information on the entire probing environment is also provided. The article also discusses results and presents a comparison with other waveform acquisition techniques. It ends with a brief discussion on the developments needed to scale the technique to future processes.