This paper gives an overview of methods for imaging the distributions of dopant in semiconductor devices. Top view imaging by means of NanoSIMS and chemical etching will be discussed as well as cross section imaging on etched transmission electron microscopy (TEM) lamellas and Scanning Spreading Resistance Microscopy (SSRM).

With high implant doses, strained silicon technologies and shrinking feature sizes, dislocation related failures seem to gain more importance in advanced CMOS devices. On the basis of case studies, different types of dislocations as well as the electrical characteristics of the corresponding devices will be presented.