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Frank Hitzel
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Proceedings Papers
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 485-491, October 28–November 1, 2024,
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Milling experiments were undertaken with an AFM-in-SEM system to examine various layers in the SRAMs of a 3 nm finFET node technology chip. The simultaneous Conductive AFM and tomographic milling operation provided feedback as to the exact state of delayering in the sample. Despite the relatively rough appearance of some areas of the chip, the milling by the AFM tip was able to create local areas with high planarity. The AFM measurement provided the exact moment certain structures were polished through. Discussion of various electrical modes in the analysis that might provide clearer indications of breakthrough is also undertaken in this paper.
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 509-518, November 12–16, 2023,
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A commercially available 4H-SiC power device and a GaN on SiC HEMT were examined with Ga-FIB sectioning and various junction analysis techniques. The impact of Ga-FIB on the electronic properties of such power devices is observed to be less significant than anticipated. A field of view was FIB-milled into the structure, exposing a row of devices. In this window, p/n junctions were evaluated by Passive Voltage Contrast (PVC), Electron Beam Induced Current (EBIC), and Kelvin Force Probe Microscopy (KFPM). Results showed excellent fidelity to expectations and each technique brought out new insights. In further work, the gate voltage was varied and the changing of depletion zones upon device turn-on was observed. This work: 1) Demonstrates complete sufficiency of Ga-FIB cross sections for regular cross-sectional work. 2) Demonstrates a novel method for investigating junction properties from Ga-FIB sections of power devices which largely leaves the rest of the device intact. 3) Provides some assurance that the Ga-FIB does not severely impact the evaluation of junction properties in some power semiconductors. 4) Points to alternative mechanism for device turn-on.
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 561-566, November 12–16, 2023,
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A commercially available 6T SRAM was examined with an AFM-in-SEM system. A conductive AFM measurement was taken using an AC bias on the backside of the sample with a linear amplifier on the data. Then using a cone-shaped, diamond AFM tip, subsequent scans were made over the field of view at increasingly higher downforce until areas of the chip were worn away. The results provide a survey of implants and structure milling from contact level through the wells of the device. An additional experiment was performed with EBAC.
Proceedings Papers
ISTFA2023, ISTFA 2023: Tutorial Presentations from the 49th International Symposium for Testing and Failure Analysis, t1-t86, November 12–16, 2023,
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Presentation slides for the ISTFA 2023 Tutorial session “Power Semiconductor Failure Analysis Tutorial.”
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 438-444, October 30–November 3, 2022,
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The results of analyses on a commercially available 7 nm SRAM, using an in-situ AFM inside a SEM, are presented. In addition to typical results for conductive AFM, a novel method is described that uses the SEM beam to prepare a region for additional material removal, thus bringing out clearer electrical data. This would be of exceptional value for technology nodes using cobalt as a contact material. Finally, techniques making use of the current from the SEM beam as the source of current during the measurement are described. The technique may have value for well resistance measurements using in-situ structures on live product, a survey of junction health, or the localization of point defects.