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Deepak Goyal
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Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 448-451, November 12–16, 2023,
Abstract
View Papertitled, Near-Field Synthetic Aperture Focusing Technique to Enhance the Inspection Capability of Multi-Layer HBM Stacks in Scanning Acoustic Microscopy
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for content titled, Near-Field Synthetic Aperture Focusing Technique to Enhance the Inspection Capability of Multi-Layer HBM Stacks in Scanning Acoustic Microscopy
This paper investigates the enhanced inspection of High Bandwidth Memory (HBM) stacks using Scanning Acoustic Microscopy (SAM). As the multi-layer structure is quite complex, sophisticated signal processing methods are employed. To improve detection capabilities and inspection time, the Synthetic Aperture Focusing Technique (SAFT) is utilized. In contrast to previous trials applying SAFT on SAM data, this contribution introduces Near Field SAFT. Reconstruction is also performed for layers between the transducer and its focus, in the near field of the transducer. This approach allows for measurements with common working distances, providing higher frequencies and improved resolution. Systematic evaluations are conducted on various measurement setups and transducers with different center frequencies and focal lengths in order to determine the most optimal measurement setup.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110132
EISBN: 978-1-62708-247-1
Abstract
Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief review of conventional TDR and its application limitations to advanced packages in semiconductor industry. The article introduces electro optical terahertz pulse reflectometry (EOTPR) and discusses how its improvements of using high frequency impulse signal addressed application challenges and quickly made it a well-adopted tool in the industry. The third part of this article introduces a new method which combines impulse signal and the TDT concept, and discusses a combo TDR and TDT method. Cases studies and application notes are shared and discussed for each technique. Application benefits and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared.
Proceedings Papers
ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 485-488, November 5–9, 2017,
Abstract
View Papertitled, Advanced In Situ X-ray Metrology for Thermal Interface Materials Package Failure Analysis
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for content titled, Advanced In Situ X-ray Metrology for Thermal Interface Materials Package Failure Analysis
Innovative in situ X-ray metrologies for package failure analysis (FA) were developed to understand solder thermal interface materials (STIM) package process and failure mechanisms through elevated temperature. Dynamic STIM void formation mechanism and STIM bleeding-out dependency on reflow were observed. It was found that long sit time before STIM liquidus temperature helps to minimize the STIM void formation and fast cooling mitigates the STIM bleed-out risk. Our studies demonstrate that in situ metrologies offer direct guidance to packaging process optimization and accelerate root-cause identification for temperature induced package failures; therefore, it improves throughput-time for packaging technology development.
Proceedings Papers
ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 468-470, November 3–7, 2013,
Abstract
View Papertitled, High Resolution C-Mode Scanning Acoustic Microscope Techniques for the Failure Analysis of Microelectronic Packages
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for content titled, High Resolution C-Mode Scanning Acoustic Microscope Techniques for the Failure Analysis of Microelectronic Packages
Fault isolation and failure analysis for Si related issues in microelectronic packages need non-destructive and high resolution techniques to reduce the analysis time. This paper illustrates non-destructive and high resolution CSAM techniques, which are shown to be very effective in subtle thin film defect and die edge defect CSAM imaging.
Proceedings Papers
ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 95-99, November 11–15, 2012,
Abstract
View Papertitled, Non Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-Ray Computed Tomography
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for content titled, Non Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-Ray Computed Tomography
The 3D package configuration presents challenges to conventional Fault Isolation (FI) and Failure Analysis (FA) methods. This paper illustrates that with correct Electro Optical Terahertz Pulse Reflectometry (EOTPR) data processing, interpretation and additional reference spectra, the combination of EOTPR to isolate the open/high resistance failure location and 3D X-ray Computed Tomography (CT) to image the failure is very effective for System in a Package (SIP) FI/FA.
Proceedings Papers
ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 30-35, November 2–6, 2008,
Abstract
View Papertitled, New Developments in High-Resolution X-ray Computed Tomography for Non-Destructive Defect Detection in Next Generation Package Technologies
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for content titled, New Developments in High-Resolution X-ray Computed Tomography for Non-Destructive Defect Detection in Next Generation Package Technologies
The development of a next generation high-resolution x-ray Computed Tomography (CT) tool and its applications are reported in this paper. Some of the key features are region of interest capability, improved time-to-data, improved usability, and data collection automation capability. We also discuss the key technical challenges that are faced by x-ray CT technology. Critical cases that are hard or not possible to isolate by alternative methods are also discussed. Examples include Controlled Collapse Chip Connection (C4) bump cracking and “invisible” non-wetting analysis, ball grid array (BGA) solder joint cracking, and wirebond microcracking and wirebond shorting, as well as demonstration of progressive testing capability.
Proceedings Papers
ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 56-61, November 2–6, 2003,
Abstract
View Papertitled, 3D X-ray Computed Tomography (CT) for Electronic Packages
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for content titled, 3D X-ray Computed Tomography (CT) for Electronic Packages
Next generation assembly/package development challenges are primarily increased interconnect complexity, density, and multi-layer/multi-stacked packages with ever shorter development time. The results of this trend present some distinct challenges for the analytical tools and techniques to support this technology roadmap. The key challenge in the analytical tools and techniques is the development of nondestructive imaging for improved time to information. The 3D X-ray Computed tomography (CT) system named “X-Tek NGI” has been co-developed by Intel and X-Tek to address this need. The current paper will discuss the configuration and several applications where this tool has been applied successfully to solve current package technology development issues and provide package construction analysis (including enabled components). This paper will discuss the details of the system configuration, examples together with the current limitations and future direction for non-destructive package failure analysis.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2001) 3 (4): 15–19.
Published: 01 November 2001
Abstract
View articletitled, Roadmap: The Assembly Analytical Forum: Addressing The Analytical Challenges Facing Packaging and Assembly
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for article titled, Roadmap: The Assembly Analytical Forum: Addressing The Analytical Challenges Facing Packaging and Assembly
Over the last few years, new challenges increased the pressure on packaging and assembly analytical resources. Reduced product development cycle time, increased market segmentation, new package and die level materials, ever shrinking device geometries, and fully enabled technologies (i.e. with thermal, retention, and EMI solutions) created these new pressures on fault isolation/failure analysis efforts and package development.
Proceedings Papers
ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 49-54, November 12–16, 2000,
Abstract
View Papertitled, X-Ray Tomography for Electronic Packages
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for content titled, X-Ray Tomography for Electronic Packages
Next generation assembly/package development challenges are primarily increased interconnect complexity and density with ever shorter development time. The results of this trend present some distinct challenges for the analytical tools/techniques to support this technical roadmap. The key challenge in the analytical tools/techniques is the development of non-destructive imaging for improved time to information. This paper will present the key drivers for the non-destructive imaging, results of literature search and evaluation of key analytical techniques currently available. Based on these studies requirements of a 3D imaging capability will be discussed. Critical breakthroughs required for development of such a capability are also summarized.
Proceedings Papers
Time Domain Reflectometry as a Device Packaging Level Failure Analysis and Failure Localization Tool
ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 285-291, November 12–16, 2000,
Abstract
View Papertitled, Time Domain Reflectometry as a Device Packaging Level Failure Analysis and Failure Localization Tool
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for content titled, Time Domain Reflectometry as a Device Packaging Level Failure Analysis and Failure Localization Tool
Detecting failure in electrical connectivity at the component packaging level is a major expenditure of the industry’s failure analysis (FA) resources. These package failures can result from material/manufacturing excursions, stress tests, and/or customer returns. However, many of the methods employed currently (such as X-ray or crosssectioning) can fall short in terms of throughput time, or success rate. Moreover, many FA techniques can be destructive and therefore leave the sample useless for subsequent tests. On the other hand, time domain reflectometry (TDR) can be used as a component packaging level FA tool which meets the needs of quickly, precisely, and non-destructively locating electrical connectivity problems in signal traces. Once the failure location has been pin pointed, other FA methods (X-ray, cross-section, etc.) can be used more easily to determine why the failure occurred. Since TDR testing involves no physical preparation, the sample will be completely intact for subsequent tests. TDR uses a low voltage, low current, and very short rise time voltage pulse to determine the impedance of a signal trace as a function of time. With a waveform of trace impedance versus time, not only can the presence of a failure be detected, but the distance along the trace to the anomaly can also be quickly determined. This paper presents TDR as a useful tool for package level failure analysis labs. The paper proposes one set of solutions for enabling effective TDR analysis (e.g., TDR test fixturing), and discusses some TDR methodologies for detecting and locating anomalies. The methodologies will be illustrated using three example cases that reflect some commonly used packaging technologies: Flip-Chip Organic Land Grid Array (FC-OLGA), Flip-Chip Pin Grid Array (FC-PGA), and Plastic Land Grid Array (PLGA).