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Dan Bodoh
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Proceedings Papers
ISTFA2024, ISTFA 2024: Tutorial Presentations from the 50th International Symposium for Testing and Failure Analysis, f1-f107, October 28–November 1, 2024,
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Presentation slides for the ISTFA 2024 Tutorial session “LADA and SDL—Powerful Techniques for Marginal Failures (2024 Update).”
Proceedings Papers
ISTFA2023, ISTFA 2023: Tutorial Presentations from the 49th International Symposium for Testing and Failure Analysis, h1-h119, November 12–16, 2023,
Abstract
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Presentation slides for the ISTFA 2023 Tutorial session “LADA and SDL-Powerful Techniques for Marginal Failures (2023 Update).”
Proceedings Papers
ISTFA2022, ISTFA 2022: Tutorial Presentations from the 48th International Symposium for Testing and Failure Analysis, c1-c104, October 30–November 3, 2022,
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This presentation is an application-oriented tutorial on laser-assisted device alteration (LADA) and soft defect localization (SDL) techniques and how they are used to analyze marginal digital failures and identify analog circuits that are sensitive to voltage perturbations. The presentation includes well-illustrated instructions for equipment setup and validation, guidelines for collecting and analyzing images, and examples of how to interpret pass/fail sites and assess the effect of laser interactions on circuit behaviors. It also includes a brief overview of time-resolved LADA and introduces the concept of laser-induced fault isolation (LIFA).
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 144-152, October 30–November 3, 2022,
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Laser Voltage Probing (LVP) is an essential Failure Analysis (FA) technique that has been widely adopted by the industry. Waveforms that are collected allow for the analyst to understand various internal failure modes related to timing or abnormal circuit behavior. As technology nodes shrink to the point where multiple transistors reside within the diffraction-limited laser spot size, interpretation of the waveforms can become extremely difficult. In this paper we discuss some of the evolving challenges faced by LVP and propose a new technique known as Differential LVP (dLVP) that can be used to debug marginal failing devices that exhibit a pass/fail boundary in their shmoo plot. We demonstrate how separate pass and fail LVP waveforms can be collected simultaneously and compared to immediately identify whether logic is corrupted and when the corruption occurs. The benefits of this new technique are many. They include guarantees of equivalent pass vs. fail data independent of crosstalk, system noise, stage drift, probe placement, temperature effects, or the diffraction-limited resolution of the probe system. Implementing dLVP into existing tools could extend their effective lifetimes and improve their efficacy related to the demands posed by the debug of 5nm technologies and smaller geometries. We anticipate that fully integrated and evolved dLVP will complement workhorse FA applications such as Laser Assisted Device Alteration (LADA) and Soft Defect Localization (SDL) analysis. Wherein those techniques map timing marginalities propagating to, and observed by, a capture flop, dLVP can extend such capabilities by identifying the first instance of corrupted logic inside the flop and map the corruption all the way to the chip output pin.
Proceedings Papers
ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, e1-e99, October 31–November 4, 2021,
Abstract
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This presentation is an application oriented tutorial on laser-assisted device alteration (LADA) and soft defect localization (SDL) techniques and how they are used to analyze marginal digital failures and identify analog circuits that are sensitive to voltage perturbations. The presentation includes well-illustrated instructions for equipment setup and validation, guidelines for collecting and analyzing images, and examples of how to interpret pass/fail sites and assess the effect of laser interactions on circuit behaviors. It also includes a brief overview of time-resolved LADA and introduces the concept of laser-induced fault isolation (LIFA).
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110228
EISBN: 978-1-62708-247-1
Abstract
Diagnosing the root cause of a failure is particularly challenging if the symptom of the failure is not consistently observable. This article focuses on Laser Assisted Device Alteration/Soft Defect Localization (LADA/SDL), a global fault isolation technique, for detecting such failures. The discussion begins with a section describing the three steps in LADA/SDL analysis setup: create the test loop with the fail flag and loop trigger, select the laser dwell time, and select the shmoo bias point. An overview of LADA/SDL workflow is then presented followed by a brief section on time-resolved LADA. The closing pages of the article consider in detail SDL laser interaction physics and LADA laser interaction physics.
Proceedings Papers
ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 93-103, October 28–November 1, 2018,
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We present the first experimental demonstration of stuck-at scan chain fault isolation through the exploitation of Single Event Upsets (SEU) in a Laser-Induced Fault Analysis (LIFA) system. By observing a pass/fail flag, we can spatially map all flops after a defect in a failing scan chain through induced SEU sites produced by a fiber-amplified 25 ps 1064 nm diode laser. In addition, a custom fault isolation methodology is presented in which the result highlights only the first working flop immediately after the defect mechanism causing the stuck-at chain failure. This work demonstrates a novel method for rapid scan chain fault isolation that significantly improves localization efficacy over conventional best-known methods (BKM) based on frequency mapping. Moreover, experimental results are presented to demonstrate that LIFA can be extended to interrogate the data state of flip flops in a scan chain. Results are also presented to establish that LIFA can be configured as a hardware-based diagnostics platform.
Proceedings Papers
ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 228-237, November 5–9, 2017,
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We present an upgraded time-resolved LADA system, with a 25ps pulsed laser, integrated into a commercial laser scanning microscope used in failure analysis. We demonstrate the use of this system on 14nm/16nm finfet devices.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2015) 17 (2): 10–17.
Published: 01 May 2015
Abstract
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Laser-assisted device alteration (LADA) is an effective tool for identifying speed-limiting paths in ICs. When implemented with a continuous wave laser, it can reveal where the speed-limiting path resides but not when the slow (or fast) logic transition is occurring. To overcome this limitation, an enhanced version of the technique has been developed. This article discusses the capabilities of the new method, called picosecond time-resolved LADA, and explains how it complements the existing failure analysis toolset, facilitating faster resolution of issues and root-cause identification.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2015) 17 (1): 24–27.
Published: 01 February 2015
Abstract
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The 40th International Symposium for Testing and Failure Analysis (ISTFA 2014) was held November 8 to 14, 2014, at the George R. Brown Convention Center in Houston, Texas. “Exploring the Many Facets of Failure Analysis,” the theme of ISTFA 2014, emphasized the diverse nature of semiconductor failure analysis in the 21st century. The technical sessions, keynotes, and tutorials at ISTFA 2014 covered a wide range of topics from fault isolation and sample prep to extreme environment failures and the birth of the digital signal processor.
Proceedings Papers
ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 73-81, November 9–13, 2014,
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Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuit. In this paper, the characterization of continuous wave 1340nm laser induced currents and the LADA failure rate show that a two photon absorption explanation for the LADA effect is not plausible. The following sections confirm the results of a 28nm-node nMOS transistor using a 2.45NA solid immersion lens. The effects of global heating to that of local laser heating are then compared. The paper shows that the LADA response time to approximately 1300nm irradiation is << 100ns. It explains LADA at approximately 1300nm, free carrier absorption in the silicon and in the local silicide layers, and presents selected 1320nm LADA images on 28nm-node devices. Finally, it shows 1064nm LADA images on the same structure that indicate that 1064nm interaction with transistors is related to free carrier absorption, rather than electron-hole pair creation.
Proceedings Papers
ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 82-86, November 9–13, 2014,
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Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuits. LADA can reveal the physical location of a speed path, but not the timing of the speed path. This paper describes the root cause analysis benefits of 1064nm time resolved LADA (TR-LADA) with a picosecond laser. It shows several examples of how picosecond TR-LADA has complemented the existing fault isolation toolset and has allowed for quicker resolution of design and manufacturing issues. The paper explains how TR-LADA increases the LADA localization resolution by eliminating the well interaction, provides the timing of the event detected by LADA, indicates the propagation direction of the critical signals detected by LADA, allows the analyst to infer the logic values of the critical signals, and separates multiple interactions occurring at the same site for better understanding of the critical signals.
Proceedings Papers
ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 183-189, November 11–15, 2012,
Abstract
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In this paper, we describe improved hardware to connect a semiconductor tester or applications board to a laser scanning microscope (LSM) for performing dynamic laser stimulation (DLS). The hardware, called DXGlue, simplifies the DLS workflow and enables new applications. We describe its precise monitoring of the fail rate and fail mode, its use for time resolved DLS and the enabling of long test loops with short laser dwell times.
Proceedings Papers
ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 43-51, November 15–19, 2009,
Abstract
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We describe a technique that is used to obtain timing information from laser assisted device alteration (LADA). The technique uses a non-pulsed laser scanning microscope to obtain timing information with a temporal resolution on the order of microseconds. Custom software is used to extract the timing information from the LADA images.
Proceedings Papers
ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 181-190, November 14–18, 2004,
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Since failure analysis (FA) tools originated in the design-for-test (DFT) realm, most have abstractions that reflect a designer's viewpoint. These abstractions prevent easy application of diagnosis results in the physical world of the FA lab. This article presents a fault diagnosis system, DFS/FA, which bridges the DFT and FA worlds. First, it describes the motivation for building DFS/FA and how it is an improvement over off-the-shelf tools and explains the DFS/FA building blocks on which the diagnosis tool depends. The article then discusses the diagnosis algorithm in detail and provides an overview of some of the supporting tools that make DFS/FA a complete solution for FA. It also presents a FA example where DFS/FA has been applied. The example demonstrates how the consideration of physical proximity improves the accuracy without sacrificing precision.
Proceedings Papers
ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 655-661, November 3–7, 2002,
Abstract
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Time-resolved photon emission has been shown to be useful in analyzing clock skews and timing-related defects in flip-chip devices. In practice, time-resolved photon emission using the S-25 Quantar detector cannot be used at long loop lengths (typically >10 μs). This paper discusses a near-infrared (NIR) optimized time-resolved emission system to demonstrate that even with long loop lengths time-resolved photon emission can be extremely useful for defect localization. Specifically, it describes time-resolved photon emission system, and shows how time-resolved photon emission was used to solve two different issues that caused scan fails on silicon-on-insulator devices, and briefly discusses the interpretation of optical waveforms. The two issues are presented as case studies.