Destructive physical analysis (DPA) is one of the reliability evaluation methods, which observes defects and faults in a device, and it can classify the reliability level of the device. After a description of the current method for Au wires, this paper explains the DPA for a Cu wire device. The DPA for semiconductor devices is divided roughly into three steps: a non-destructive inspection, an assembly process inspection, and a wafer process inspection. Investigation of DPA for Cu wire device includes wire material identification, optimization of decapsulation for Cu wire device and wire pull strength test, and observation of package cross-section. From the result, novel sample preparation (embedding a sample in molding package and forming the package to be suitable for cross-sectional observation by ion polishing) enables the observation of the thin alloy layer at the wire/pad interface.

We have developed a process diagnostics system for photovoltaic energy modules based on standard methods and practices already developed for LSI and MEMS technologies. This paper provides a description of methods used to ensure the conformation of solar cell modules to the rigors of high-quality manufacturing necessary for reliable photovoltaic energy production when exposed to long-term environmental use. We have verified the possibility of inspecting each solar cell and the module assembly in detail for several photovoltaic technologies, specifically monocrystalline Si, polycrystalline Si, and CuInxGa1-xSe2 An objective set of criteria for the quality of each module can be provided by this method for use in module selection by consumers. Moreover, the quality of conformance and reliability data can be used as feedback to the manufacturer to minimize the number of defects created during manufacturing process and ameliorate their effects.

The goal of this paper is to construct a process diagnostic system of the MEMS device based on this "Large Scale Integrated (LSI) Diagnostic system" and then to perform a structural evaluation of the devices based upon the data. The paper explains the methods of analysis for the assembly process and the wafer process. The evaluation of the wafer process indicated that changes were required for MEMS devices vs. conventional LSI diagnosis. It was confirmed that "a peculiar inspection point to MEMS", "Sample making technology", and "Judgment criteria of the defect" were necessary. It is also necessary to do preliminary studies of each MEMS device and to restructure the inspection menu corresponding to the structure based on the inspection results.