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D. Wang
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Proceedings Papers
Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause
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ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 205-209, November 9–13, 2014,
Abstract
View Papertitled, Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause
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for content titled, Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause
In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.
Proceedings Papers
Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology
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ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 106-111, November 11–15, 2012,
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View Papertitled, Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology
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for content titled, Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology
In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.
Proceedings Papers
Structure-Wear Resistance Relationship for JP-5000 Cermet Coatings
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ITSC 2002, Thermal Spray 2002: Proceedings from the International Thermal Spray Conference, 300-305, March 4–6, 2002,
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View Papertitled, Structure-Wear Resistance Relationship for JP-5000 Cermet Coatings
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for content titled, Structure-Wear Resistance Relationship for JP-5000 Cermet Coatings
This paper presents a comparative study of the microstructure, phase properties, hardness, and wear resistance of high-pressure HVOF sprayed coatings. The layers were produced by the JP-5000 method using WC12Co and WC17Co powders varying in size distribution and morphology. Spray parameters were statistically evaluated using a design-of-experiments approach in order to optimize wear resistance as well as deposition efficiency, carbide grain size, and degree of oxidation. Paper includes a German-language abstract.
Proceedings Papers
Relationship of Corrosion Resistance–Coating Structure of HP/HVOF Carbide and Metallic Coatings
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ITSC 2001, Thermal Spray 2001: Proceedings from the International Thermal Spray Conference, 1143-1148, May 28–30, 2001,
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View Papertitled, Relationship of Corrosion Resistance–Coating Structure of HP/HVOF Carbide and Metallic Coatings
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for content titled, Relationship of Corrosion Resistance–Coating Structure of HP/HVOF Carbide and Metallic Coatings
A study was carried out on the corrosion resistance of the JP- 5000 coatings of Superalloy 625, WC-12%Co, WC-17%Co, WC-10%Co-4%Cr and Cr 3 C 2 -25NiCr materials and comparisons made with chrome plating. The coating corrosion resistance was evaluated using the standard salt fog test (ASTM B117) and also by submersion tests in 10% FeCl 3 solution (ASTM G48), in 10% HNO 3 and in 0.1M H 2 SO 4 + 0.2M HCl solutions. The coating corrosion mechanisms in relationship with the coating microstructure and phase constitutions are discussed. The test results show that the HP/HVOF coating corrosion resistance can be significantly improved through spray parameters and coating structure optimization. All coatings tested herein having optimum microstructure and phase constitutions have shown improved corrosion resistances in comparison with chrome plating.
Proceedings Papers
Study on the Spray Processes and Characteristics of Cr3C2/NiCr Coating
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ITSC1998, Thermal Spray 1998: Proceedings from the International Thermal Spray Conference, 683-685, May 25–29, 1998,
Abstract
View Papertitled, Study on the Spray Processes and Characteristics of Cr3C2/NiCr Coating
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for content titled, Study on the Spray Processes and Characteristics of Cr3C2/NiCr Coating
HVOF and plasma spray processes were used to apply Cr3C2-NiCr coatings, which were then characterized by X-ray diffraction and various other tests. The results revealed that the HVOF coatings were more stable than their plasma-sprayed counterparts as well as harder, tougher, less porous, and more erosion resistant. The HVOF coatings have been successfully used in industry and have proven to be an acceptable alternative to electroplated chromium.
Proceedings Papers
The Characteristics of Diamond Film Deposited by Magnet-Enhanced Plasma Jet CVD
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ITSC1996, Thermal Spray 1996: Proceedings from the National Thermal Spray Conference, 391-395, October 7–11, 1996,
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View Papertitled, The Characteristics of Diamond Film Deposited by Magnet-Enhanced Plasma Jet CVD
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for content titled, The Characteristics of Diamond Film Deposited by Magnet-Enhanced Plasma Jet CVD
A diameter of 30 mm polycrystalline diamond film has been deposited by magnet-enhanced DC plasma jet CVD. The diamond film was characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and surface profilograph. Results reveal that under the same depositing parameters, magnetic field can increase purity of diamond film, improve thickness uniformity of diamond film, but no influence on crystal perfection and size of microcrystal of diamond film. A discussion on magnetic effect is presented.