Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Article Type
Volume Subject Area
Date
Availability
1-3 of 3
Benjamin Stripe
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 153-162, October 30–November 3, 2022,
Abstract
View Paper
PDF
Near Infra-Red (NIR) techniques such as Laser Voltage Probing/Imaging (LVP/I), Dynamic Laser Stimulation (DLS), and Photon Emission Microscopy (PEM) are indispensable for Electrical Fault Isolation/Electrical Failure Analysis (EFI/EFA) of silicon Integrated Circuit (IC) devices. However, upcoming IC architectures based on Buried Power Rails (BPR) with Backside Power Delivery (BPD) networks will greatly reduce the usefulness of these techniques due to the presence of NIR-opaque layers that block access to the transistor active layer. Alternative techniques capable of penetrating these opaque layers are therefore of great interest. Recent developments in intense, focused X-ray microbeams for micro X-Ray Fluorescence (μXRF) microscopy open the possibility to using X-rays for targeted and intentional device alteration. In this paper, we will present results from our preliminary investigations into X-ray Device Alteration (XDA) of flip-chip packaged FinFET devices and discuss some implications of our findings for EFI/EFA.
Proceedings Papers
ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 397-401, November 10–14, 2019,
Abstract
View Paper
PDF
New heterogeneous 3D integration schemes and continuing miniaturization of semiconductor packaging components, such as micropillars, are driving demand for substantive changes to conventional PFA (physical failure analysis). In particular, desired performance capabilities include the ability to nondestructively determine failures within seconds to minutes. New tools should be quantitative, have sufficient resolution to determine sub-micron sized defects and voids in TSVs at the wafer or package level. It should also measure thickness and their material composition of multilayer structures above the wafer surface, such as microbumps, or those below the surface including UBM and RDL. In this paper we are introducing a novel x-ray fluorescence microscope technique capable of solving the above applications in advanced packaging for PFA and process development. The same technique can also be applied in the front end metrology of new gate materials, 3D FinFET structures within test structures in patterned wafers. Characterization of sub nanoscopic changes (sensitivity of sub-angstrom) in film and dopants deposited in 3D structures will also be shown. With its high sensitivity for trace materials, contamination analysis of post hard mask residue, post metal etch residue especially in high aspect ratio structures is also possible.
Proceedings Papers
ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 485-489, November 6–10, 2016,
Abstract
View Paper
PDF
We describe a technique for mapping the distribution and concentrations of trace elements, most notably with capabilities of achieving 1-10 parts per million sensitivities within 1 second and at <8 μm resolution. The technique features an innovative, high flux microstructured x-ray source and a new approach to x-ray optics comprising a high efficiency twin paraboloidal x-ray mirror lens. The resulting ability to acquire dramatically higher sensitivities and resolution than conventional x-ray fluorescence approaches, and at substantially higher throughput enables powerful compositional mapping for failure analysis, process development, and process monitoring.