The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Microcalorimeter based energy dispersive X-ray analysis (EDS) combines in a revolutionary way resolution of wavelength dispersive spectroscopy (WDS) with the ease of use of conventional EDS. The necessary operating temperatures (~100mK) for the superconducting sensor are supplied by a mechanical, maintenance free and fully automated cooling system, allowing the integration of the system not only in a traditional F/A environment, but also as an inline (cleanroom) installation. Typical examples of material analysis in everyday F/A work show that the detector exhibits an energy resolution of about 10 eV. With this performance, the solution of well known overlap problems existing for element combinations commonly used in semiconductor technology (peak separation of Ti/N, Ta/Si, W/Si) is possible. Structures of small volume can be investigated successfully, since the tool is optimized for work in the low energy range. The case of a failing TiN-layer showed that μcalorimeter EDS allows also thin film analysis: oxide layers with a thickness difference of a few nm can be distinguished; subsequent depth-profiling with Auger electron spectroscopy confirmed the results.