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Avraham Raz
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Proceedings Papers
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 182-187, October 28–November 1, 2024,
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Soft defects—failures that manifest only under specific voltage, temperature, or frequency conditions—require specialized fault isolation techniques for accurate characterization. This paper demonstrates thermal response failure localization using scanning electron microscope (SEM) nanoprobing with an integrated thermal stage. While nanoprobing typically serves as the final step in fault isolation failure analysis (FIFA), thermal nanoprobing is essential for characterizing temperature-dependent parametric defects by enabling measurements at both passing and failing temperatures. We present three case studies: a "worse at cold" failure reproduction, a parametric root cause identification through thermal characterization, and a complex thermal failure that was uniquely isolatable through thermal nanoprobing. These cases illustrate the technique's effectiveness in analyzing temperature-dependent defects that occur outside room temperature conditions.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 284-288, October 30–November 3, 2022,
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Delayering is an essential sample preparation step in physical failure analysis (PFA) of integrated circuits (IC). During delayering it is crucial to precisely control the endpoint and uniformity of the region of interest (ROI). Furthermore, to perform SEM based nanoprobing it is also required to end the delayering process without residues on the surface that will reduce conductivity of, or induce shorts between, isolated contacts. Delayering via mechanical polishing has been the main approach for PFA and nanoprobing. However, as the shrinkage of the interconnect layer thickness reduced below 100 nm, it has become very challenging to control the polish endpoint and to achieve robustly controlled process. Recently gas assisted Xe+ Plasma FIB (PFIB) has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. The purpose of this study is to analyze the PFIB ion beam interaction with MOSFET devices, addressing ion beam damage related device degradation. We explored the final surface treatment required for nanoprobing and the impact on MOSFETs. For this purpose, we monitored device parameters after PFIB delayering final steps with different beam conditions and compare PFIB prepared samples to polished prepared samples. Consequently, we summarize the considerations of parameters for ion beam on final surface treatment.
Proceedings Papers
ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 290-298, November 15–19, 2020,
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An experimental setup is presented, that allows in-situ Transition Electron Microscopy (TEM) investigation of void formation and growth within fully embedded interconnect structure, as a response to an external bias. A special TEM holder is employed to perform in-situ I-V measurements across the Via, simultaneously monitoring the morphological and chemical changes surrounding the void. This work presents in detail a Focused Ion Beam (FIB) based sample preparation method that allows the analysis of a Cu single Via structure found in the advanced microelectronic 14nm FinFET technology, as well as preliminary TEM observations.