With high implant doses, strained silicon technologies and shrinking feature sizes, dislocation related failures seem to gain more importance in advanced CMOS devices. On the basis of case studies, different types of dislocations as well as the electrical characteristics of the corresponding devices will be presented.

Modern package technologies like flip-chip, require measurements of transient signals from the chip backside [1], [2]. This is because frontside access is not possible while running a test pattern. This is an established method for CMOS devices and commercial equipment is available. This paper demonstrates the usefulness of a Laser- Voltage-Prober for transient signal measurements from the backside on bipolar-devices.