This paper presents two cases utilizing high KeV Passive Voltage Contrast (PVC) for defect localization that is impossible with other techniques. The first case is thin layer resistor of CrSi. De-processing or polishing to expose the defective layer may damage it. High KeV PVC combined with FIB etch allows for a clear top view and x-section image. The second case involves a beam sensitive via chain. In order to avoid ion-beam-caused-damage, carbon paste was used to ground the sample. A high KeV electron beam was used to localize the defective via. This paper also discusses the way to avoid beam caused sample damage and how to apply it for further grounding and FIB cross sectioning to reveal the defect.

This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.