Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Journal
Article Type
Volume Subject Area
Date
Availability
1-13 of 13
Andreas Rummel
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 255-258, October 28–November 1, 2024,
Abstract
View Paper
PDF
This work employs an easy-to-use method to quickly find and characterize leakage currents on a semiconductor sample by combining electrical fault isolation and electrical measurements. By using a simple add-on for a probing system’s tip holders, a prober is transformed into a scanning device that measures currents through a sample’s surface and visualizes the currents in a 2D color map that can be superimposed onto the SE image. As a case study, an area of 1.5 µm x 1.5 µm of a 3 nm device was scanned while the current through the contacts was measured and visualized with Current Imaging (CI) and gate currents were characterized. One leaking gate could be identified and the position of the failure was localized using Electron Beam Induced Resistance CHange (EBIRCH) imaging. This technique also avoids any damage caused by electron beam irradiation as the beam can be switched off during scanning.
Proceedings Papers
Gregory M. Johnson, Andreas Rummel, Pietro Paolo Barbarino, Giuseppe Sciuto, Massimiliano Astuto ...
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 463-468, October 28–November 1, 2024,
Abstract
View Paper
PDF
An innovative method of characterizing p/n junctions and finding defects in SiC MOSFETs is discussed. First, a baseline technique is considered, which involves OBIRCH analysis of shorting paths after etching off the surface metal. The resolution, however, is not satisfactory. Top surface EBIC and EBIRCH results are then presented. Single-probe imaging with EBIC on gates with a 25 kV SEM (Scanning Electronic Microscopy) is shown to be able to image sub-surface depletion zones in the sample. Further measurements by EBIRCH isolated the precise spot of the defect.
Proceedings Papers
ISTFA2024, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, 478-484, October 28–November 1, 2024,
Abstract
View Paper
PDF
The effects of sample prep with a Ga + -ion Focused Ion Beam (Ga-FIB) on measurements of electron beam induced current (EBIC) were studied. Concerns have been occasionally raised about amorphization from the beam, or even Ga + implantation ruining the ability to make useful measurements for purposes of either failure analysis or device tailoring. To understand the magnitude of any deleterious effects, two different lamellae from a 5 nm SRAM sample were prepared with different areas of increasingly improved polish, as indicated by decreasing, cumulative, FIB beam energy, followed by EBIC measurements at 1 or 2 kV beam landing energy. A first experiment looked at the ability to generate EBIC measurements from depletion zones and found no difference across the various beam polish cells. A second experiment considered leakage and/or shorts and found little problematic currents, within standard deviations.
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 478-482, November 12–16, 2023,
Abstract
View Paper
PDF
Insulated Gate Bipolar Transistors (IGBT) and silicon carbide (SiC) based MOSFETs have become the predominantly used power semiconductors in particular in automotive applications. For failure analysis of such devices, site-specific access to subsurface fault sites is required, as is understanding their construction and junction profiles, and how the device turns on. We have applied focused ion beam-scanning electron microscopy (FIB-SEM) tomography to visualize inner structure and dopant distributions of an IGBT and of a SiC MOSFET in three dimensions (3D). Such 3D data can be used to complement 2D electron beam induced current (EBIC) measurements obtained at site-specific FIB cross-sections in these devices.
Proceedings Papers
ISTFA2023, ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis, 509-518, November 12–16, 2023,
Abstract
View Paper
PDF
A commercially available 4H-SiC power device and a GaN on SiC HEMT were examined with Ga-FIB sectioning and various junction analysis techniques. The impact of Ga-FIB on the electronic properties of such power devices is observed to be less significant than anticipated. A field of view was FIB-milled into the structure, exposing a row of devices. In this window, p/n junctions were evaluated by Passive Voltage Contrast (PVC), Electron Beam Induced Current (EBIC), and Kelvin Force Probe Microscopy (KFPM). Results showed excellent fidelity to expectations and each technique brought out new insights. In further work, the gate voltage was varied and the changing of depletion zones upon device turn-on was observed. This work: 1) Demonstrates complete sufficiency of Ga-FIB cross sections for regular cross-sectional work. 2) Demonstrates a novel method for investigating junction properties from Ga-FIB sections of power devices which largely leaves the rest of the device intact. 3) Provides some assurance that the Ga-FIB does not severely impact the evaluation of junction properties in some power semiconductors. 4) Points to alternative mechanism for device turn-on.
Proceedings Papers
ISTFA2023, ISTFA 2023: Tutorial Presentations from the 49th International Symposium for Testing and Failure Analysis, t1-t86, November 12–16, 2023,
Abstract
View Paper
PDF
Presentation slides for the ISTFA 2023 Tutorial session “Power Semiconductor Failure Analysis Tutorial.”
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 81-85, October 30–November 3, 2022,
Abstract
View Paper
PDF
Power devices are now ubiquitous and integral in control of systems across various sectors of the economy. Silicon-based power devices still dominate in most of the applications although new materials and device architectures are becoming common in the next generation of devices. While several techniques to characterize the overall device properties are necessary, the fundamentals in several of these power devices such as Insulated Gate Bipolar Transistors (IGBTs) still rely on healthy junctions for optimal device performance. The technique of Electron Beam Induced Current (EBIC) is used to examine the depletion zones of the p/n junctions between drift and body regions of the device. Simple sample preparation methods such as cleaving the device allows quick cross-section evaluation of the device structure and electrical characterization using EBIC yields good data. The role of acceleration potential on depletion zone thickness is considered during the analysis of intact die and cross-sections. While low voltage EBIC provides images of the p/n junctions in cross-sections, it is found that high voltage (30 kV) EBIC images can also be used to image these same p/n junctions and therefore may point to a very quick line monitor or means for early failure analysis of these devices.
Proceedings Papers
ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 262-268, October 30–November 3, 2022,
Abstract
View Paper
PDF
In prior work, it was demonstrated that information about device turn-on can be obtained in a nanoprobing setup which involves no applied bias across the channel. This was performed on nFET logic devices in 7 nm technology and attributed to the Seebeck effect, or heating from the SEM beam. In this work, the experiments are continued to both nFET and pFET devices and on both 22 nm and 5 nm devices. Further discussion about the opportunities and evidence for Seebeck effect in nanoprobing are discussed.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2022) 24 (2): 12–15.
Published: 01 May 2022
Abstract
View article
PDF
This article discusses the challenges associated with nanoprobing advanced technology node devices and explains how to optimize SEM images for beam voltages of 100 eV or less.
Proceedings Papers
ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 253-257, October 31–November 4, 2021,
Abstract
View Paper
PDF
An experimental study was undertaken to determine the minimum level of leakage or shorting current that could be detected by electron-beam induced resistance change (EBIRCH) analysis. A 22-nm SRAM array was overstressed with a series of gradually increasing voltage biases followed by EBIRCH scans at 1 V and 2-kV SEM imaging until fins were observed. It was found that the fins of a pulldown device could be imaged by EBIRCH at just 12 nA of shorting current, representative of a soft failure. Stressing the sample at higher voltages eventually created an ohmic short, which upon further investigation, strongly suggested that the Seebeck effect plays a significant role in EBIRCH analysis.
Journal Articles
Journal: EDFA Technical Articles
EDFA Technical Articles (2018) 20 (3): 24–33.
Published: 01 August 2018
Abstract
View article
PDF
Advances in IC technology have made failure site localization extremely challenging. Through a series of case studies, the authors of this article show how such challenges can be overcome using EBIC/EBAC, current imaging, and nanoprobing. The cases involve a wide range of issues, including resistor chain defects, substrate leakage, microcracking, micro contamination, and open failures due to copper plating problems and missing vias.
Proceedings Papers
ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 454-457, November 6–10, 2016,
Abstract
View Paper
PDF
Using a compact nanoprobing setup comprising eight probe tips attached to piezo-driven micromanipulators, various techniques for fault isolation are performed on 28 nm samples inside an SEM. The recently implemented Current Imaging technique is used to quickly image large arrays of contacts providing a means of locating faults.
Proceedings Papers
ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 496-502, November 1–5, 2015,
Abstract
View Paper
PDF
The advances on IC technology have made defect localization extremely challenging. “Soft” failures (resistive vias and contacts) are typically difficult to localize using commonly available failure analysis (FA) techniques such as emission microscopy (EMMI) and scanning optical microscopy (SOM), and often cannot be observed by two-dimensional inspections using layer by layer removal. The article describes the Resistive Contrast Imaging (RCI) defect localization technique (also known as Electron Beam Absorbed Current (EBAC), instrumentations, and case studies on test structures or process control monitors especially designed to detect “soft” open failures on advanced (28nm and below) technology devices. It also lists the key SEM parameters critical for effective FA using the RCI nano-probing system.