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Proceedings Papers

Investigation of Protection Layer Materials for Ex-Situ Lift-Out TEM Sample Preparation with FIB for 14 nm FinFET

H. Feng, G.R. Low, P.K. Tan, Y.Z. Zhao, H.H. Yap ...
ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 469-473, November 9–13, 2014,
https://doi.org/10.31399/asm.cp.istfa2014p0469
Abstract
With continuous scaling of CMOS device dimensions, sample preparation for Transmission Electron Microscope (TEM) analysis becomes increasingly important and challenging as the required sample thickness is less than several tens of nanometers. This paper studies the protection materials for FIB milling to increase the success rate of ex-situ ‘lift-out’ TEM sample preparation on 14nm Fin-Field Effect Transistor (FinFET).
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