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Proceedings Papers

ITSC2024, Thermal Spray 2024: Proceedings from the International Thermal Spray Conference, 17-26, April 29–May 1, 2024,
... semiconductor devices Thermal Spray 2024: Proceedings from the International Thermal Spray Conference April 29 May 1, 2024; Milan, Italy httpsdoi.org/10.31399/asm.cp.itsc2024p0017 Copyright © 2024 DVS Media GmbH All rights reserved. www.asminternational.org Cold Atmospheric Plasma Metallization of Power...
Proceedings Papers

ITSC 2007, Thermal Spray 2007: Proceedings from the International Thermal Spray Conference, 313-318, May 14–16, 2007,
... Abstract A thermoelectric power generating device, in which all components were fabricated by plasma spray technique, was manufactured and its performance was evaluated. Its basic unit was composed of (Ca,Bi) 3 Co 4 O 9 p-type semiconductor chip and (Sr,Y)TiO 3-x n-type semiconductor chip...
Proceedings Papers

ITSC1999, Thermal Spray 1999: Proceedings from the United Thermal Spray Conference, 76-81, March 17–19, 1999,
..., being capable to generate power at middle to high temperatures over 300 °C, was produced by thermal spraying process. Thermal spraying was already applied to form TE device [1, 2], but most cases multi-layer device was fabricated. Repeated deposition processes for n- and p-type semiconductors, however...
Proceedings Papers

ITSC 2010, Thermal Spray 2010: Proceedings from the International Thermal Spray Conference, 207-212, May 3–5, 2010,
.... This suggests that the plasma spraying of Y 2 O 3 with slurry injection techniques is applicable to fabricating equipments for semiconductor devices, such as dry etching. Surface morphologies of the slurry coatings with splats are almost similar to conventional plasma-sprayed Y 2 O 3 coatings, identified from...
Proceedings Papers

ITSC 2008, Thermal Spray 2008: Proceedings from the International Thermal Spray Conference, 500-505, June 2–4, 2008,
... plasma treatment is effectively used for micro fabrication especially in dry etching. Applied power for generating plasma is also increasing to fabricate the Si and LCD devices uniformly onto the large scaled substrates. This trend strongly promotes application of plasma sprayed coatings by high-purity...
Proceedings Papers

ITSC 2009, Thermal Spray 2009: Proceedings from the International Thermal Spray Conference, 541-546, May 4–7, 2009,
...) coatings with high erosion resistance by plasma spraying are widely applied to shielding parts onto aluminum based inside chamber wall of dry etching equipments to protect from halogen contained plasma in semiconductor and electronic devices industries. Continuous progress about device integration and its...
Proceedings Papers

ITSC 2009, Thermal Spray 2009: Proceedings from the International Thermal Spray Conference, 567-572, May 4–7, 2009,
... in dry etching. Applied power for generating plasma is also increasing to fabricate the Si and LCD devices uniformly onto the large scaled substrates and to make high etching rate for cost reduction. This trend strongly promotes application of plasma sprayed coatings by high-purity ceramics...
Proceedings Papers

ITSC 2007, Thermal Spray 2007: Proceedings from the International Thermal Spray Conference, 943-947, May 14–16, 2007,
... Abstract Erosion properties of high purity alumina (Al 2 O 3 ) and yttria (Y 2 O 3 ) coatings prepared by plasma spraying have been investigated against process plasma in semiconductor and liquid-crystal-display (LCD) production equipments for dry etching. Studies on plasma power dependency...
Proceedings Papers

ITSC 2006, Thermal Spray 2006: Proceedings from the International Thermal Spray Conference, 557-562, May 15–18, 2006,
... and LCD device that seriously affect cost increase. In addition, bulk ceramics, such as alumina, silicon carbide and silicon nitride are mainly used as an electrostatic chuck (ESC) to stabilize the Si wafer and the LCD during fabricating process. Recently, the increase of the plasma power due...
Proceedings Papers

ITSC 2011, Thermal Spray 2011: Proceedings from the International Thermal Spray Conference, 1046-1048, September 27–29, 2011,
... the process of vacuum local coating deposition to optical electronic devices (Fig.5). Fig. 6. Spaying of aluminum barrier layer to the surface of Bi2SbTe semiconductor plates. High value of bond strength to the glass and ceramic surfaces allows the use of cold spray to replace DBC technology in production...
Proceedings Papers

ITSC2012, Thermal Spray 2012: Proceedings from the International Thermal Spray Conference, 390-392, May 21–24, 2012,
... the semiconductor industry today is the use of exotic materials in thin film applications. Traditionally, processes required Ta, W, Al and Cu materials to be deposited onto wafers to form the circuitry of the micro devices. As demand for faster, more powerful devices that consume less energy has risen, the use...
Proceedings Papers

ITSC2014, Thermal Spray 2014: Proceedings from the International Thermal Spray Conference, 513-519, May 21–23, 2014,
... and optimized for their respective function. At least four types of materials are required, including electrical insulators, conductors, and thermoelectrically active p- and n-type semiconductors. Four ceramic and three metal feedstock powers were deposited by APS, HVOF, and HVAF spraying using special masking...
Proceedings Papers

ITSC 2009, Thermal Spray 2009: Proceedings from the International Thermal Spray Conference, 505-510, May 4–7, 2009,
... sectors which are using spray coating technique and their economic impact on state s revenue has been described in details based on the industrial production and scientific outcomes. Chemical, steel, power plants, and semiconductor industry are taking a substantial lead in the spray coating applications...
Proceedings Papers

ITSC 2017, Thermal Spray 2017: Proceedings from the International Thermal Spray Conference, 173-177, June 7–9, 2017,
... insulation. In these years, semiconductor device or liquid crystal panel production process require high electric insulation apparatuses for higher productivities. Al2O3 are known as high technical value material and used in applications which inquire high breakdown voltage and electric insulation. Al2O3...
Proceedings Papers

ITSC 2013, Thermal Spray 2013: Proceedings from the International Thermal Spray Conference, 395-399, May 13–15, 2013,
...-mail: yokotahiroki@tocalo.co.jp Abstract Thermal spray technology has been supporting semiconductor fabrication and increasing its importance in the field. For example, ceramic thermal spray coatings are applied to the inner wall of the reactor in the plasma etching device which is exposed to plasma. The plasma...
Proceedings Papers

ITSC 2008, Thermal Spray 2008: Proceedings from the International Thermal Spray Conference, 495-499, June 2–4, 2008,
... coefficient decreased with an increase of Y content. As the result, the ZT value, which showed the performance for thermoelectric power generation, was reached only 0.1 in the Y content range 10% to 25% of Sr site. 1 Introduction Thermoelectric devices can directly recover electric power from the low quality...
Proceedings Papers

ITSC 2022, Thermal Spray 2022: Proceedings from the International Thermal Spray Conference, 939-944, May 4–6, 2022,
... Abstract In the semiconductor industry, plasma etching processes are widely used. Process chamber parts that are located in the plasma etching system are also exposed to the harsh environmental conditions. Thus, parts located close to the process area are typically coated with yttria...
Proceedings Papers

ITSC 2003, Thermal Spray 2003: Proceedings from the International Thermal Spray Conference, 1403-1408, May 5–8, 2003,
... power, plasma gas mixture Ar/H 2 and Ar/He, and cooling device. An analytical procedure based on XRD patterns was established for the determination of the relative amounts of anatase and rutile in the coatings. An Ar/He mixture as compared to an Ar/H 2 one seems to enhance the formation of anatase...
Proceedings Papers

ITSC 2009, Thermal Spray 2009: Proceedings from the International Thermal Spray Conference, 499-504, May 4–7, 2009,
... trend of the market is also discussed. Introduction Thermal spray in Japan has a long history, beginning with Mr. Kenjiro Ezawa, a merchant of precious metals in Ginza, Tokyo. He was interested in the thermal spray devices which was exhibited in the World Exposition held in Paris. Then, he purchased...
Proceedings Papers

ITSC2014, Thermal Spray 2014: Proceedings from the International Thermal Spray Conference, 819-823, May 21–23, 2014,
... as protective film for metal reflectors, dark mirrors, temperature stabilization and as passivation layer in metal-oxide-semiconductor (MOS) devices, etc., owing to its remarkable insulating properties [2-4]. Due to the simple and rapid preparation features of atmospheric plasma spray method, electrical...