Abstract
The need for effective electrical insulation coupled with good thermal conductivity in power electronics has led to an exploration of suitable solutions for components like Insulated-Gate Bipolar Transistors (IGBTs). Considering its material properties, AlN emerges as a promising candidate for this application due to its high thermal conductivity, good electrical insulation and ample dielectric strength. However, aluminium nitride (AlN) has a low deposition efficiency when applied by atmospheric plasma spraying (APS). In contrast to AlN, alumina has a very good deposition efficiency during thermal spraying. Feedstock development was conducted to enhance the coating deposition for AlN. Therefore, a parameter study was carried out with AlN feedstock material to form a protective alumina shell around the AlN particles. Subsequently, the heat-treated powder was applied on an aluminium substrate by APS. X-ray diffraction (XRD) analysis displayed that, the heat-treated feedstock material contained AlN and α-Al2O3 phases. It was observed from scanning electron microscopy (SEM) analysis that the AlN particles formed an oxide shell which led to an enhanced deposition efficiency with a high amount of AlN in the coating. The coatings were also investigated by XRD and SEM to prove the presence of AlN and alumina. For the first time, oxide shelled AlN was successfully applied by thermal spraying with sufficient coating deposition and enhanced AlN-content in the coating.
