Abstract

Semiconductor manufacturing apparatuses have begun to employ dry processes instead of conventional wet processes, based on the associated benefits in terms of automation, productivity, and environmental protection. This paper investigates the methods for forming an oxide-based dielectric ceramic layer on the aluminum base, a layer that has high adsorptive and stable electric properties. It discusses the electrostatic chuck, and describes the relationship between the characteristics of the aluminum oxide-titanium dioxide coating formed by the low-pressure plasma-spraying method and the resulting performance of the electrostatic chuck. The advantages of deoxidation and the change in the specific resistance of titanium dioxide during the spraying process were used to produce the layer. Paper includes a German-language abstract.

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