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Proceedings Papers

ISTFA2022, ISTFA 2022: Tutorial Presentations from the 48th International Symposium for Testing and Failure Analysis, g1-g58, October 30–November 3, 2022,
... of the wafer or die. It also provides information on the tools and techniques used to expose surfaces, regions, and features of interest for analysis. It describes the steps involved in CNC milling, mechanical grinding and polishing, reactive ion etching (RIE), laser microchemical (LMC) etching, and milling...
Proceedings Papers

ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, g1-g58, October 31–November 4, 2021,
... or die. It also provides information on the tools and techniques used to expose surfaces, regions, and features of interest for analysis. It describes the steps involved in CNC milling, mechanical grinding and polishing, reactive ion etching (RIE), laser microchemical (LMC) etching, and milling...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 314-317, November 1–5, 2015,
... Abstract This paper aims to discuss the processes involved in establishing a more rapid approach in exposing the polyfuse and thin film fuse using the reactive ion etching, chemical deprocessing and parallel lapping techniques. The results proved that parallel lapping technique in combination...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 511-516, November 3–7, 2013,
.... The surface treatment is done by creating a receding Inter-Layer Dielectric (ILD) from its neighboring tungsten contact. The creation of the receding depth could be achieved by either wet etching or dry etching (Reactive Ion Etching, RIE). In this work, the surface treatments by these two methods have been...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 383-387, November 11–15, 2012,
... the search for safer alternative deprocessing chemistries. The present work describes high selectivity poly silicon etch using simple Reactive Ion Etch (RIE) plasma system using less hazardous gases such as CF4, O2 etc. A combination of controlled wet etch and high selectivity poly silicon etch have been...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 223-229, November 13–17, 2011,
... laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices. bonding confocal scanning...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 108-112, November 14–18, 2010,
... for imaging subtle buried defects. BSE enables the localization and imaging of embedded defects through overlying insulator levels without the risk of compromising them with reactive ion etch (RIE) or plasma etch exposure or by anisotropic wet chemical delayering process steps. Once the embedded defect...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 208-213, November 15–19, 2009,
...-Mechanical Polishing (CMP) and Reactive Ion Etching (RIE). analog design back end of line chemical-mechanical polishing CMOS failure analysis front end of line quadrature-clocked voltage-dependent capacitance measurements reactive ion etching Back-End-Of-Line Quadrature-Clocked Voltage...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 280-284, November 2–6, 2008,
... of the gate including the gate oxide, new approaches to selective etch delineation by RIE are required. This article presents an automated sample preparation method for packaged microelectronic materials by combining plasma cleaning, ion beam etching, reactive ion etching and ion beam sputter coating...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 206-208, November 6–10, 2005,
... of sample preparation, including mechanical polish. This paper presents a newly modified technique which increases the planarity at the critical edge of the sample and results in a larger planar region of interest. The novel method combines both a blocked reactive ion etching and a standard planar polish...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 231-232, November 6–10, 2005,
... Abstract The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 416-421, November 6–10, 2005,
... on the IS. Eventually, Reactive Ion Etching (RIE) with an Inductively Coupled Plasma (ICP) source proved to be a successful means for removing the IS without impacting the sensing element. As the design of the integrated seal underwent multiple redesigns, the removal process was successfully modified multiple times...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 636-639, November 14–18, 2004,
... Abstract DuPont EKC265 Post Etch Residue Remover has been available for many years as post reactive ion etch photo-resist etchant for semiconductor wafer processing. It has also proven useful for the physical analysis of failing semiconductor devices. This paper shows how EKC265 can be used...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 649-654, November 14–18, 2004,
...-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 90-98, November 2–6, 2003,
... layers and low k inter-level dielectric (ILD) layers including: reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and a combination of these techniques will be discussed. In addition, novel gate level deprocessing techniques will be presented. chemical mechanical...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 288-296, November 2–6, 2003,
... preparation tool has been developed that incorporates the functionality necessary for argon – oxygen plasma cleaning, ion beam etching (IBE), reactive ion beam etching (RIBE), reactive ion etching (RIE), and ion beam sputter coating (IBSC). Control, monitoring and sequential automation of the processes...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 109-115, November 3–7, 2002,
... Abstract Current methods used for package level destructive physical analysis (DPA) such as chemical and mechanical decapsulation methods, reactive ion etching (RIE) and diamond saw x-section methods could potentially result in artifacts such as die cracking, delamination or corrosion when used...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 675-682, November 3–7, 2002,
... preparation process. This paper will discuss two different ways for silicon thinning: reactive ion etching (RIE) alone, and RIE in conjunction with mechanical milling. In addition, the characterization and optimization of the RIE process for backside silicon thinning will be discussed in this paper. We have...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 63-68, November 12–16, 2000,
... Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 267-272, October 27–31, 1997,
.... Silicon pitting in the select transistor channel was identified to be the failure mechanism. The silicon pitting was experimentally confirmed to be attributed to the penetration of the bottom oxide in the oxide-nitride-oxide (ONO) structure due to the nitride removal using reactive ion etching (RIE...