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Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 262-268, October 30–November 3, 2022,
... Abstract In prior work, it was demonstrated that information about device turn-on can be obtained in a nanoprobing setup which involves no applied bias across the channel. This was performed on nFET logic devices in 7 nm technology and attributed to the Seebeck effect, or heating from the SEM...
Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 269-276, October 30–November 3, 2022,
...) Microscopy for accurate delayering control. PFIB can be used for planar Failure Analysis (FA) delayering but also for nanoprobing sample preparation. This paper introduces the detail of nanoprobing sample preparation by PFIB and discusses nanoprobing results on 5nm FinFET technology. 5nm process...
Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 284-288, October 30–November 3, 2022,
... Abstract Delayering is an essential sample preparation step in physical failure analysis (PFA) of integrated circuits (IC). During delayering it is crucial to precisely control the endpoint and uniformity of the region of interest (ROI). Furthermore, to perform SEM based nanoprobing it is also...
Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 329-332, October 30–November 3, 2022,
... Abstract Electrostatic discharge (ESD) can easily damage the nanoprobes used in the failure analysis of semiconductor devices. Nanoprobes with tips that have radii of curvature of a few nanometers are especially sensitive to ESD damage, because applying even modest electrical potentials leads...
Proceedings Papers

ISTFA2022, ISTFA 2022: Tutorial Presentations from the 48th International Symposium for Testing and Failure Analysis, b1-b121, October 30–November 3, 2022,
... Abstract This presentation provides an overview of nanoprobe systems and what they reveal about defects and abnormalities in semiconductor device structures and materials. The presentation covers the basic operating principles, implementation, and capabilities of atomic force probe and beam...
Proceedings Papers

ISTFA2022, ISTFA 2022: Tutorial Presentations from the 48th International Symposium for Testing and Failure Analysis, f1-f104, October 30–November 3, 2022,
... Abstract This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers passive voltage contrast (PVC), nanoprobing, conductive atomic force microscopy, and photon emission microscopy (PEM). It describes signal...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 40-43, October 31–November 4, 2021,
.... SIMS analysis from the backside of the wafer detected no Cu even after most of the backside material was removed. Likewise, electrical nanoprobing showed no parametric drift in the FinFETs near the edge of the wafer, comparable to device behavior in a Cu-free Si substrate. These results indicate...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 224-240, October 31–November 4, 2021,
... Abstract This paper explains how nanoprobe analysis was used to determine the cause of data retention failures in nonvolatile memory (NVM) bitcells. The challenge with such memory cells is that they consist of two transistors with a single control gate in series with a programmable floating...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 258-262, October 31–November 4, 2021,
... Abstract In this paper, we describe the difference between oscilloscope pulsing tests and waveform generator fast measurement unit (WGFMU) tests in analyzing high-resistance defects in DRAM main cells. Nanoprobe systems have various constraints in terms of pulsing whether it involves...
Proceedings Papers

ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, a1-a123, October 31–November 4, 2021,
... Abstract This presentation provides an overview of nanoprobe systems and what they reveal about defects and abnormalities in semiconductor device structures and materials. The presentation covers the basic operating principles, implementation, and capabilities of atomic force probe and beam...
Proceedings Papers

ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, f1-f134, October 31–November 4, 2021,
... resistance change methods (OBIRCH and EBIRCH), lock-in thermography, photon emission microscopy (PEM), and nanoprobing. It describes how the measurements are made, the sensing mechanisms involved, and the output that can be expected. defect localization electron beam absorbed current electron beam...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 38-41, November 15–19, 2020,
... Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 209-213, November 15–19, 2020,
... providing a stack view of the layout layers for the net(s) of interest. Key analysis decisions are made and communicated using the stitch diagram. Using this diagram, selective nanoprobe measurements are made. Software implementation that extracts and draws the diagram allows for faster creation as well...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 214-218, November 15–19, 2020,
... Abstract For advanced node semiconductor process development, manufacturing, fault isolation and product failure analysis, nanoprobing is an indispensable technology. As the process technology node scales, transistors and materials used are more susceptible to electron beam damage and changes...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 219-225, November 15–19, 2020,
... devices, especially when it involves soft failure. This paper discusses FA on an RF product soft failure issue by the pulsed currentvoltage (IV) nanoprobing technique. The device suffered from high-frequency failure and exhibited abnormal repetitive softstart signature. Previous publications on pulsed IV...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 244-248, November 10–14, 2019,
... Beam (pFIB) low angle milling, the area of interest in a failure IC device is made accessible from any direction for nanoprobing and Electron Beam Absorbed Current (EBAC) analysis. This methodology allows subtle defects to be more accurately localized and analyzed for thorough root-cause understanding...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 273-276, November 10–14, 2019,
... Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 317-322, November 10–14, 2019,
... transistors. Since REGO can be present on any multi-FIN transistor the potential does exist for the defect to escape test screening. Subsequently a reliability BTI (Bias Temperature Instability) stress experiment by nanoprobing at contact level was designed to assess REGO’s potential reliability impact...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 329-335, November 10–14, 2019,
... Abstract Nanoprobing systems have evolved to meet the challenges from recent innovations in the semiconductor manufacturing process. This is demonstrated through an exhibition of standard SRAM measurements on TSMC 7 nm FinFET technology. SEM based nanoprober is shown to meet or exceed...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 336-339, November 10–14, 2019,
... direct analysis are limited for this kind of device, especially in the case of subtle defects or soft fail. As semiconductor devices scale, the defects become smaller and more subtle. Nanoprobing is usually the only way to find the defect location electrically before any further physical analysis...